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BAT750-7

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
PQMH13
NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PQMH13 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 November 2015 6 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current (emitter open)
V
CB
= 50 V; I
E
= 0 A; T
amb
= 25 °C - - 100 nA
V
CE
= 30 V; I
B
= 0 A; T
amb
= 25 °C - - 1 µAI
CEO
collector-emitter cut-off
current (base open)
V
CE
= 30 V; I
B
= 0 A; T
amb
= 150 °C - - 5 µA
I
EBO
emitter-base cut-off
current (collector open)
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C - - 170 µA
h
FE
DC current gain V
CE
= 5 V; I
C
= 10 mA; T
amb
= 25 °C 100 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 5 mA; I
B
= 0.25 mA; T
amb
= 25 °C - - 100 mV
V
I(off)
off-state input voltage V
CE
= 5 V; I
C
= 100 µA; T
amb
= 25 °C - 0.6 0.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 5 mA; T
amb
= 25 °C 1.3 0.9 - V
R1 bias resistor 1 [1] 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio
T
amb
= 25 °C
[1] 8 10 12
C
C
collector capacitance V
CB
= 10 V; I
E
= 0 A; f = 1 MHz;
T
amb
= 25 °C
- - 2.5 pF
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA; f = 100 MHz;
T
amb
= 25 °C
[2] - 230 - MHz
[1] See section "Test information" for resistor calculation and test conditions.
[2] Characteristics of built-in transistor
NXP Semiconductors
PQMH13
NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PQMH13 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 November 2015 7 / 14
V
CE
= 5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 4. DC current gain as a function of collector
current; typical values
T
amb
= 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
Fig. 6. Collector-emitter saturation voltage as a
function of collector current; typical values
V
CE
= 0.3 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. On-state input voltage as a function of collector
current; typical values
NXP Semiconductors
PQMH13
NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PQMH13 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 4 November 2015 8 / 14
V
CE
= 5 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 8. Off-state input voltage as a function of collector
current; typical values
f = 1 MHz; T
amb
= 25 °C
Fig. 9. Collector capacitance as a function of collector-
base voltage; typical values
V
CE
= 5 V; T
amb
= 25 °C
Fig. 10. Transition frequency as a function of collector current; typical values of built-in transistor
11. Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
P1-P3P4-P6P7-P9P10-P12P13-P15

BAT750-7

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Buy BAT750-7
Manufacturer:
Description:
DIODE SCHOTTKY 40V 750MA SOT23-3
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