BSS138N
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
V
DS
60 V
R
DS(on),max
3.5
Ω
I
D
0.23 A
Product Summary
PG-SOT-23
Type Package Tape and Reel Marking
BSS138N PG-SOT-23 H6327: 3000 SKs
BSS138N PG-SOT-23 H6433: 10000 SKs
Rev. 2.86 page 1 2012-04-17
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
A
=25 °C
0.23 A
T
A
=70 °C
0.18
Pulsed drain current
I
D,pulse
T
A
=25 °C
0.92
Reverse diode dv/dt dv /dt
I
D
=0.23 A, V
DS
=48 V,
di/dt=200 A/µs,
T
j,max
=150 °C
6 kV/µs
Gate source voltage
V
GS
±20 V
ESD sensitivity JESD22-A114 (HBM) Class 0 (<250V)
Power dissipation
P
tot
T
A
=25 °C
0.36 W
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
Rev. 2.86 page 1 2012-04-17
