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BSS138NH6327XTSA2

P1-P3P4-P6P7-P9
BSS138N
1 Power dissipation 2 Drain current
P
tot
=f(T
A
) I
D
=f(T
A
); V
GS
≥10 V
0
0.1
0.2
0.3
0.4
0 40 80 120 160
P
tot
[W]
T
A
[°C]
0
0.05
0.1
0.15
0.2
0.25
0 40 80 120 160
I
D
[A]
T
A
[°C]
Rev. 2.86 page 4 2012-04-17
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
A
=25 °C; D=0 Z
thJA
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
100 ms
10 µs
100 µs
1 ms
10 ms
DC
10
-3
10
-2
10
-1
10
0
10
1
1 10 100
I
D
[A]
V
DS
[V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
0
10
1
10
2
10
3
Z
thJA
[K/W]
t
p
[s]
0
0.1
0.2
0.3
0.4
0 40 80 120 160
P
tot
[W]
T
A
[°C]
0
0.05
0.1
0.15
0.2
0.25
0 40 80 120 160
I
D
[A]
T
A
[°C]
Rev. 2.86 page 4 2012-04-17
BSS138N
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
2.9 V 3.2 V
3.5 V
4 V
4.5 V
5 V
7 V
10 V
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5
R
DS(on)
[Ω]
I
D
[A]
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V7 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
I
D
[A]
V
DS
[V]
Rev. 2.86 page 5 2012-04-17
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
2.9 V 3.2 V
3.5 V
4 V
4.5 V
5 V
7 V
10 V
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5
R
DS(on)
[Ω]
I
D
[A]
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
I
D
[A]
V
GS
[V]
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.00 0.10 0.20 0.30 0.40
g
fs
[S]
I
D
[A]
2.9 V
3.2 V
3.5 V
4 V
4.5 V
5 V7 V
10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
012345
I
D
[A]
V
DS
[V]
Rev. 2.86 page 5 2012-04-17
BSS138N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=0.23 A; V
GS
=10 V V
GS(th)
=f(T
j
); V
DS
=V
GS
; I
D
=26 µA
parameter: I
D
typ
98 %
0
2
4
6
8
-60 -20 20 60 100 140
R
DS(on)
[Ω]
T
j
[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
-60 -20 20 60 100 140
V
GS(th)
[V]
T
j
[°C]
Rev. 2.86 page 6 2012-04-17
11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V
DS
); V
GS
=0 V; f=1 MHz; T
j
=25°C I
F
=f(V
SD
)
parameter: T
j
typ
98 %
0
2
4
6
8
-60 -20 20 60 100 140
R
DS(on)
[Ω]
T
j
[°C]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
-60 -20 20 60 100 140
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
0
10
1
10
2
0 102030
C [pF]
V
DS
[V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
-3
10
-2
10
-1
10
0
00.40.81.21.622.4
I
F
[A]
V
SD
[V]
Rev. 2.86 page 6 2012-04-17
P1-P3P4-P6P7-P9

BSS138NH6327XTSA2

Mfr. #:
Buy BSS138NH6327XTSA2
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 230mA SOT-23-3
Lifecycle:
New from this manufacturer.
Delivery:
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