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IPB25N06S3L-22

P1-P3P4-P6P7-P9
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
OptiMOS
®
-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
1)
I
D
T
C
=25 °C, V
GS
=10 V
25 A
T
C
=100 °C,
V
GS
=10 V
2)
25
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C
100
Avalanche energy, single pulse
2)
E
AS
I
D
=12.5 A
120 mJ
Avalanche current, single pulse
I
AS
25 A
Gate source voltage
3)
V
GS
±16 V
Power dissipation
P
tot
T
C
=25 °C
50 W
Operating and storage temperature
T
j
, T
stg
-55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
V
DS
55 V
R
DS(on),max
(SMD version) 21.3
mΩ
I
D
25 A
Product Summary
Type Package Marking
IPB25N06S3L-22 PG-TO263-3-2 3N06L22
IPI25N06S3L-22 PG-TO262-3-1 3N06L22
IPP25N06S3L-22 PG-TO220-3-1 3N06L22
PG-TO220-3-1PG-TO262-3-1PG-TO263-3-2
Rev. 1.1 page 1 2007-11-07
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - 3.3 K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
--62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
4)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
55 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=20 µA
1.2 1.7 2.2
Zero gate voltage drain current
I
DSS
V
DS
=55 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 µA
V
DS
=55 V, V
GS
=0 V,
T
j
=125 °C
2)
- 1 100
Gate-source leakage current
I
GSS
V
GS
=16 V, V
DS
=0 V
- 1 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=5 V, I
D
=11 A
- 32.9 39.9
mΩ
V
GS
=5 V, I
D
=11 A,
SMD version
- 32.6 39.6
V
GS
=10 V, I
D
=17 A
- 18.4 21.6
V
GS
=10 V, I
D
=17 A,
SMD version
- 18.1 21.3
Values
Rev. 1.1 page 2 2007-11-07
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance
C
iss
- 2260 - pF
Output capacitance
C
oss
- 283 -
Reverse transfer capacitance
C
rss
- 270 -
Turn-on delay time
t
d(on)
-9-ns
Rise time
t
r
-26-
Turn-off delay time
t
d(off)
-30-
Fall time
t
f
-43-
Gate Char
g
e Characteristics
2)
Gate to source charge
Q
gs
-11-nC
Gate to drain charge
Q
gd
-6-
Gate charge total
Q
g
-3147
Gate plateau voltage
V
plateau
- 4.7 - V
Reverse Diode
Diode continous forward current
2)
I
S
- - 25 A
Diode pulse current
2)
I
S,pulse
- - 100
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=25 A,
T
j
=25 °C
0.6 0.9 1.3 V
Reverse recovery time
2)
t
rr
-15-ns
Reverse recovery charge
2)
Q
rr
-15-nC
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f =1 MHz
V
DD
=27.5 V,
V
GS
=10 V, I
D
=25 A,
R
G
=14.8 Ω
V
DD
=11 V, I
D
=25 A,
V
GS
=0 to 10 V
V
R
=27.5 V, I
F
=I
S
,
di
F
/dt =100 A/µs
1)
Current is limited by bondwire; with an R
thJC
= 3.3 K/W the chip is able to carry 31 A at 25°C. For detailed
information see Application Note ANPS071E
2)
Defined by design. Not subject to production test.
3)
Qualified at -5V and +16V.
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1 page 3 2007-11-07
P1-P3P4-P6P7-P9

IPB25N06S3L-22

Mfr. #:
Buy IPB25N06S3L-22
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 25A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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