IPB25N06S3L-22

IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
13 Typical avalanche energy 14 Drain-source breakdown voltage
E
AS
= f(T
j
); V
BR(DSS)
= (T
j
); I
D
= 1 mA
parameter: I
D
15 Typ. gate charge 16 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= 25 A pulsed
parameter: V
DD
46
48
50
52
54
56
58
60
62
64
66
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
11 V
44 V
0
2
4
6
8
10
12
0 1020304050
Q
gate
[nC]
V
GS
[V]
25 A
12.5 A
6.25 A
0
40
80
120
160
200
240
280
0 50 100 150 200
T
j
[°C]
E
AS
[mJ]
V
G
Q
gat
Q
Q
Q
g
Rev. 1.1 page 7 2007-11-07
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of noninfringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1 page 8 2007-11-07
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
Revision History
Version
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 2.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
Data Sheet 1.1
Changes
Removal of ordering code
Removal of foot note 3, avalanche
diagrams
Update of Qrr and trr typ
Update of Infineon Logo
Implementation of avalanche
current single pulse
Removal of ESD class
15.12.2006
Update of Infineon address
Implementation of RoHS and AEC
logo, update of feature list
15.12.2006
15.12.2006
Update of disclaimer
07.11.2007
07.11.2007
07.11.2007
07.11.2007
Date
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
15.12.2006
implementation of footnote 2 for
Eas specification
removal of Vdg specification from
data sheet
Update of data sheet layout
Adaptation of Ias
Rev. 1.1 page 9 2007-11-07

IPB25N06S3L-22

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 25A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet