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IRGP4660DPBF

P1-P3P4-P6P7-P9P10-P12
IRGP4660DPbF/IRGP4660D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
4
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
0 2 4 6 8 10
V
CE
(V)
0
20
40
60
80
100
120
140
160
180
200
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0
V
F
(V)
0
20
40
60
80
100
120
140
160
180
200
I
F
(
A
)
-40°c
25°C
175°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 24A
I
CE
= 48A
I
CE
= 96A
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 24A
I
CE
= 48A
I
CE
= 96A
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 24A
I
CE
= 48A
I
CE
= 96A
0 5 10 15
V
GE
(V)
0
20
40
60
80
100
120
140
160
180
200
I
C
E
(
A
)
T
J
= 25°C
T
J
= 175°C
IRGP4660DPbF/IRGP4660D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
5
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
Fig. 16 - Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
Fig. 17 - Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18 - Typ. Diode I
RR
vs. R
G
T
J
= 175°C
0 20 40 60 80 100
I
C
(A)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 25 50 75 100 125
Rg (Ω)
1000
1500
2000
2500
3000
3500
4000
4500
5000
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
0 25 50 75 100 125
R
G
(Ω)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 20 40 60 80 100
I
F
(A)
0
5
10
15
20
25
30
35
40
45
I
R
R
(
A
)
R
G =
10
Ω
R
G =
22
Ω
R
G =
47
Ω
R
G =
100
Ω
0 25 50 75 100 125
R
G
(
Ω)
10
15
20
25
30
35
40
45
I
R
R
(
A
)
0 50 100 150
I
C
(A)
0
1000
2000
3000
4000
5000
6000
E
n
e
r
g
y
(
μ
J
)
E
OFF
E
ON
IRGP4660DPbF/IRGP4660D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
6
Fig. 19 - Typ. Diode I
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; I
F
= 48A; T
J
= 175°C
Fig. 20 - Typ. Diode Q
RR
vs. di
F
/dt
V
CC
= 400V; V
GE
= 15V; T
J
= 175°C
Fig. 23 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 24 - Typical Gate Charge
vs. V
GE
I
CE
= 48A; L = 600μH
Fig. 21 - Typ. Diode E
RR
vs. I
F
T
J
= 175°C
Fig. 22 - V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 25°C
0 200 400 600 800 1000
di
F
/dt (A/μs)
10
15
20
25
30
35
40
45
I
R
R
(
A
)
0 20 40 60 80 100
I
F
(A)
0
100
200
300
400
500
600
700
800
900
E
n
e
r
g
y
(
μ
J
)
R
G
=
10Ω
R
G
= 22Ω
R
G
= 47Ω
R
G
= 100Ω
8 1012141618
V
GE
(V)
4
6
8
10
12
14
16
18
T
i
m
e
(
μ
s
)
50
100
150
200
250
300
350
400
C
u
r
r
e
n
t
(
A
)
0 20 40 60 80 100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 255075100
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 300V
V
CES
= 400V
0 500 1000 1500
di
F
/dt (A/μs)
1000
1500
2000
2500
3000
3500
4000
Q
R
R
(
n
C
)
10
Ω
22
Ω
100
Ω
47
Ω
48A
24A
96A
P1-P3P4-P6P7-P9P10-P12

IRGP4660DPBF

Mfr. #:
Buy IRGP4660DPBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
Lifecycle:
New from this manufacturer.
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