IRGP4660DPBF

IRGP4660DPbF/IRGP4660D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
7
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.0872 0.000114
0.1599 0.001520
0.2020 0.020330
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.2774 0.000908
0.3896 0.003869
0.2540 0.030195
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci i/Ri
Ci= τi/Ri
IRGP4660DPbF/IRGP4660D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
8
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
0
1K
VCCDUT
L
L
Rg
80 V
DUT
VCC
+
-
Fig.C.T.5 - Resistive Load Circuit
Rg
VCC
DUT
R =
VCC
ICM
G force
C sens
e
100K
DUT
0.0075μF
D1 22K
E force
C force
E sense
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
DC
4X
DUT
VCC
R
SH
IRGP4660DPbF/IRGP4660D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
9
Fig. WF3 - Typ. Diode Recovery Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF1 - Typ. Turn-off Loss Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ T
J
= 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ T
J
= 25°C using Fig. CT.3
-40
-30
-20
-10
0
10
20
30
40
50
60
-0.15 -0.05 0.05 0.15 0.25
time (μS)
I
RR
(A)
Peak
I
RR
Q
RR
t
RR
10%
Peak
I
RR
-100
0
100
200
300
400
500
600
-5.00 0.00 5.00 10.00
time (μS)
V
CE
(V)
-100
0
100
200
300
400
500
600
I
CE
(A)
V
CE
I
CE
-100
0
100
200
300
400
500
600
700
-0.40 0.10 0.60 1.10
Time(μs)
V
CE
(V)
-20
0
20
40
60
80
100
120
140
I
CE
(A)
E
OFF
Loss
5% V
CE
5% I
CE
90% I
CE
tf
-100
0
100
200
300
400
500
600
700
6.20 6.40 6.60 6.80 7.00
Time (μs)
V
CE
(V)
-20
0
20
40
60
80
100
120
140
I
CE
(A)
E
ON
TEST
CURRENT
90% test
10% test
current
5% V
CE
tr

IRGP4660DPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet