N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T470N
IFBIP D AEC / 2009-12-01, H.Sandmann
29/09 1/10 Seite/page
enndaten
Elektrische Eigenschaften
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
T
vj
= -40°C... T
vj max
V
DRM
,V
RRM
1200
1400
1600
V
V
V
Vorwärts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
T
vj
= -40°C... T
vj max
V
DSM
1200
1400
1600
V
V
V
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
T
vj
= +25°C... T
vj max
V
RSM
1300
1500
1700
V
V
V
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
I
TRMSM
800 A
Dauergrenzstrom
average on-state current
T
C
= 85 °C
I
TAVM
470 A
Dauergrenzstrom
average on-state current
T
C
= 55 °C, θ = 180°sin, t
P
= 10 ms I
TAVM
670 A
Durchlaßstrom-Effektivwert
RMS on-state current
I
TRMS
1060 A
Stossstrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
TSM
7100
6350
A
A
Grenzlastintegral
I²t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I²t
252
202
10³ A²s
10³ A²s
Kritische Stromsteilheit
critical rate of rise of on-state current
DIN IEC 60747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
(di
T
/dt)
cr
150 A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuchstabe / 5
th
letter F
(dv
D
/dt)
cr
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
T
vj
= T
vj max
, i
T
= 1200 A
T
vj
= T
vj max
, i
T
= 300 A
v
T
max.
max.
1,85
1,10
V
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,80 V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
0,75 mΩ
Durchlasskennlinie 100 A ≤ i
T
≤ 2400 A
on-state characteristic
T
TTT
iD1)i(lnCiBAv ⋅++⋅+⋅+=
T
vj
= T
vj max
A=
B=
C=
D=
9,865E-01
2,622E-04
-1,155E-01
3,953E-02
Zündstrom
gate trigger current
T
vj
= 25 °C, v
D
= 12V I
GT
max. 200 mA
Zündspannung
gate trigger voltage
T
vj
= 25 °C, v
D
= 12V V
GT
max. 2 V
Nicht zündender Steuerstrom
gate non-trigger current
T
vj
= T
vj max
, v
D
= 12V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
I
GD
max.
max.
10
5
mA
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
V
GD
max. 0,2 V
Haltestrom
holding current
T
vj
= 25°C, v
D
= 12V I
H
max. 300 mA
Einraststrom
latching current
T
vj
= 25°C, v
D
= 12V, R
GK
≥ 10 Ω
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
I
L
max. 1200 mA
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
max. 50 mA
Zündverzug
gate controlled delay time
DIN IEC 60747-6
T
vj
= 25 °C, i
GM
= 1 A, di
G
/dt = 1 A/µs
t
gd
max. 3 µs
prepared by:
H.Sandmann date of publication: 2009-12-16
approved by: M.Leifeld
revision: 3.1
