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T470N16TOFXPSA1
P1-P3
P4-P6
P7-P9
P10-P10
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T470N
IFBIP D AEC / 2009-12-01, H.Sandmann
A
29/09
7/10
Seite/page
Tc
DC
θ
=
3
0°
180
°
60
°
12
0°
90
°
0
20
0
40
0
60
0
80
0
10
00
12
00
0
1
00
2
00
3
00
40
0
50
0
60
0
70
0
80
0
I
TAV
[A
]
P
TA
V
[W
]
0°
0
180
°
Durchlassverlustleistung /
On-state power loss
P
TA
V
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
DC
180°
120°
90
°
60°
θ
=
3
0°
20
40
60
80
100
120
140
0
100
200
300
4
00
500
600
700
80
0
I
TAV
[A]
T
C
[°C]
0°
0
18
0°
Höchstzulässige Geh
äusetemperatur / Maximum allow
able case temperature T
C
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Beidseitige Kühlung / T
wo-sided cooling
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T470N
IFBIP D AEC / 2009-12-01, H.Sandmann
A
29/09
8/10
Seite/page
Steuerkennlinie
Zündverzug
0,1
1
10
100
10
100
1000
10000
100000
i
G
[mA
]
v
G
[V]
T
vj
=
+125°C
T
vj
=
-40 °C
T
vj
=
+25°C
a
b
c
d
Steuercharakteristik v
G
= f (i
G
) mit Zündbereichen für V
D
= 12 V
Gate characteristic v
G
= f (i
G
) with triggering area for V
D
= 12 V
Höchstzulässige Spitzens
teuerverlustleistung / Maximum rat
ed peak gate power dissipation P
GM
= f (t
g
) :
a - 40W / 10ms b - 80W / 1ms c - 100W / 0,5ms d - 150W / 0,1ms
100
1000
10000
1
10
100
-di/dt [A
/µs]
Q
r
[µAs
]
i
TM
= 500A
20A
50A
100A
200A
Sperrverzögerungsla
dung / Recovered charge Q
r
= f(di/dt)
T
vj
= T
vjmax
, v
R
≤
0,5 V
RRM
, V
RM
= 0,8 V
RRM
Parameter: Durchlassstro
m / On-state current i
TM
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T470N
IFBIP D AEC / 2009-12-01, H.Sandmann
A
29/09
9/10
Seite/page
0-
50V
0,33 VRR
M
0,67 V
R
RM
0
1
2
3
4
5
6
7
1
2
3
4
5
6
7
8
9
1
0
1
11
21
31
4
1
51
6
1
7
A
n
za
hl Pu
lse b
ei 50Hz
Sinu
s Halbwellen
N
u
m
b
e
r of
p
ulses f
or 50Hz
sin
uso
idal h
alf
waves
I
T(
OV
)M
[k
A
]
Typische Abhängi
gkeit des Grenzstromes I
T(OV)M
von der Anza
hl für eine Folge v
on Sinus
Halbwellen bei 50H
z. Parameter: Rück
wärtsspannung V
RM
Typical depende
ncy of maximum ov
erload on-state current I
T(OV)M
as a number of a s
equence of
sinusoidal half waves at 50Hz. Parameter:
peak reverse voltage V
RM
I
T(OV)M
= f (pulses
, V
RM
) ; T
vj
= T
vjmax
P1-P3
P4-P6
P7-P9
P10-P10
T470N16TOFXPSA1
Mfr. #:
Buy T470N16TOFXPSA1
Manufacturer:
Infineon Technologies
Description:
SCR MODULE 1600V 800A DO200AA
Lifecycle:
New from this manufacturer.
Delivery:
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