IPW60R040CFD7XKSA1

Product Brief
600 V CoolMOS™ CFD7 SJ MOSFET
Infineons answer to resonant high power topologies
The 600 V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET tech-
nology with integrated fast body diode, completing the CoolMOS™ 7 series. It is the ideal
choice for resonant topologies in high power SMPS applications, such as server, telecom
and EV charging stations.
The new CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 family. CoolMOS™ CFD7
comes with reduced gate charge (Q
g
), improved turn-o behavior and a reverse recovery
charge (Q
rr
) of up to 69 percent lower compared to the competition, as well as the lowest
reverse recovery time (t
rr
) in the market. Due to these features CoolMOS™ CFD7 oers
highest eiciency and best-in-class reliability in so switching topologies such as LLC and
ZVS phase-shi full-bridge.
In addition, CoolMOS™ CFD7
enables higher power density
thanks to its optimized R
DS(on)
.
All together, this latest fast body diode series brings clear benefits compared to
competitor
oerings by combining the advantages of a fast switching technology with superior
commuta-
tion ruggedness without sacrificing easy implementation in the design-in process.
Q
rr
comparison of 170 mΩ CFD vs. 190 mΩ range competition*
*Comparison based on datasheet values
Ultra-fast body diode
Best-in-class reverse recovery
charge (Q
rr
)
Improved reverse diode dv/dt and
dif/dt ruggedness
Lowest FOM R
DS(on)
x Q
g
and E
oss
Best-in-class R
DS(on)
/package
combinations
Best-in-class hard commutation
ruggedness
Highest reliability for resonant
topologies
Highest eiciency with outstanding
ease-of-use/performance trade-o
Enabling increased power density
solutions
Key features
Key benefits
www.infineon.com/cfd7
1200
1000
800
600
400
200
0
Comp. C Comp. A Comp. D
Q
rr
[nC]
Comp. B
-69 %
-32 %
CFD2 CFD7
World‘s best Q
rr
got even better!
Q
rr
comparison of 170 mΩ CFD vs. 190 mΩ range competition*
*Comparison based on datasheet values
Product Brief
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2018 Infineon Technologies AG.
All Rights Reserved.
Order Number: B152-I0548-V2-5D00-AP-EC
Date: 06 / 2018
Please note!
THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND
ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE
REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF
ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR
PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE.
WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR
PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT
PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND
THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE
THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED
APPLICATION.
WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR
THE INFORMATION GIVEN HEREIN AT ANY TIME.
Additional information
For further information on technologies, our products, the
application of our products, delivery terms and conditions
and/or prices, please contact your nearest Infineon Technologies
oice (www.infineon.com).
Warnings
Due to technical requirements, our products may contain
dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies oice.
Except as otherwise explicitly approved by us in a written
document signed by authorized representatives of Infineon
Technologies, our products may not be used in any life-
endangering applications, including but not limited to medical,
nuclear, military, life-critical or any other applications where a
failure of the product or any consequences of the use thereof can
result in personal injury.
The application measurements shown below illustrate that the features of the latest CoolMOS™ CFD7 family result in significant eicien-
cy improvements in resonant switching topologies. CoolMOS™ CFD7 oers up to 1.45 percent increased energy eiciency over the main
competition on the market and exceeds the requirements of the targeted applications.
By combining the 600 V CoolMOS™ CFD7 with the 2EDN EiceDRIVER™ family, Infineon enables optimized system
solutions for high power designs. For more information visit: www.infineon.com/edn
600 V CoolMOS™ CFD7 portfolio
600 V CoolMOS™ CFD7 SJ MOSFET
Infineons answer to resonant high power topologies
available coming soon
Δ Eiciency [%]
Δ Eiciency [%]
Load current [A] Load current [A]
1
0.8
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
0 10 20 30 40 0 5 10 15 20 25 30
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-0.1
-0.2
-0.3
IPW60R070CFD
7
IPW65R080CFD
Competitor A
Competitor B
Competitor C
Competitor D
Eiciency c
omparison of CFD7 vs. CFD2 and competition in 2 kW ZVS Eiciency comparison of CFD7 vs. CFD2 and competition in 3 kW LLC
Δ 1.45%
Δ 0.17%
Δ 0.22%
Δ 0.79%
R
DS(on)
max.
[mΩ]
TO-263
D²PAK
TO-252
DPAK
ThinPAK 8x8 TO-220 TO-220 FullPAK TO-247
360 IPB60R360CFD7 IPD60R360CFD7 IPP60R360CFD7 IPA60R360CFD7
280 IPB60R280CFD7 IPD60R280CFD7 IPP60R280CFD7 IPA60R280CFD7
210/225 IPB60R210CFD7 IPD60R210CFD7 IPL60R225CFD7 IPP60R210CFD7 IPA60R210CFD7
170/185 IPB60R170CFD7 IPD60R170CFD7 IPL60R185CFD7 IPP60R170CFD7 IPA60R170CFD7 IPW60R170CFD7
145/160 IPB60R145CFD7 IPD60R145CFD7 IPL60R160CFD7 IPP60R145CFD7 IPA60R145CFD7 IPW60R145CFD7
125/140 IPB60R125CFD7 IPL60R140CFD7 IPP60R125CFD7 IPA60R125CFD7 IPW60R125CFD7
105/115 IPB60R105CFD7 IPL60R115CFD7 IPP60R105CFD7 IPW60R105CFD7
90/95 IPB60R090CFD7 IPL60R095CFD7 IPP60R090CFD7 IPW60R090CFD7
70/75 IPB60R070CFD7 IPL60R075CFD7 IPP60R070CFD7 IPW60R070CFD7
55/60 IPB60R055CFD7 IPL60R060CFD7 IPW60R055CFD7
40 IPB60R040CFD7 IPW60R040CFD7
31 IPW60R031CFD7
24 IPW60R024CFD7
18 IPW60R018CFD7

IPW60R040CFD7XKSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Delivery:
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