IXFN210N30P3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 60 100 S
C
iss
16.2 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 2550 pF
C
rss
42 pF
R
Gi
Gate Input Resistance 1.0
t
d(on)
46 ns
t
r
25 ns
t
d(off)
94 ns
t
f
13 ns
Q
g(on)
268 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 105A 80 nC
Q
gd
72 nC
R
thJC
0.083C/W
R
thCS
0.05 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 210 A
I
SM
Repetitive, Pulse Width Limited by T
JM
840 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.5 V
t
rr
250 ns
Q
RM
4.1 C
I
RM
28
A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 105A
R
G
= 1 (External)
I
F
= 105A, -di/dt = 100A/s
V
R
= 100V, V
GS
= 0V
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Part must be heatsunk for high-temp I
DSS
measurement.
(M4 screws (4x) supplied)
SOT-227B (IXFN) Outline
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
