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IXFN210N30P3

P1-P3P4-P5
IXFN210N30P3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
- 40ºC
25ºC
Fig. 8. Transconductance
0
40
80
120
160
200
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 30 60 90 120 150 180 210 240 270
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 105A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
10ms
100ms
25µs
DC
© 2013 IXYS CORPORATION, All Rights Reserved
IXFN210N30P3
IXYS REF: F_210N30P3(K9) 6-22-12
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P5

IXFN210N30P3

Mfr. #:
Buy IXFN210N30P3
Manufacturer:
Littelfuse
Description:
MOSFET N-Channel: Power MOSFET w/Fast Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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