IRF7103PbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 50 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.049 V/°C Reference to 25°C, I
D
= 1mA
0.11 0.13 V
GS
= 10V, I
D
= 3.0A
0.16 0.20 V
GS
= 4.5V, I
D
= 1.5A
V
GS(th)
Gate Threshold Voltage 1.0 3.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 3.8 S V
DS
= 15V, I
D
= 3.0A
2.0 V
DS
= 40V, V
GS
= 0V
25 V
DS
= 40V, V
GS
= 0V, T
J
= 55 °C
Gate-to-Source Forward Leakage 100 V
GS
= 20V
Gate-to-Source Reverse Leakage -100 V
GS
= - 20V
Q
g
Total Gate Charge 12 30 I
D
= 2.0A
Q
gs
Gate-to-Source Charge 1.2 nC V
DS
= 25V
Q
gd
Gate-to-Drain ("Miller") Charge 3.5 V
GS
= 10V
t
d(on)
Turn-On Delay Time 9.0 20 V
DD
= 25V
t
r
Rise Time 8.0 20 I
D
= 1.0A
t
d(off)
Turn-Off Delay Time 45 70 R
G
= 6.0Ω
t
f
Fall Time 25 50 R
D
= 25Ω
Between lead,6mm(0.25in.)
from package and center
of die contact
C
iss
Input Capacitance 290 V
GS
= 0V
C
oss
Output Capacitance 140 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 37 = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage 1.2 V T
J
= 25°C, I
S
= 1.5A, V
GS
= 0V
t
rr
Reverse Recovery Time 70 100 ns T
J
= 25°C, I
F
= 1.5A
Q
rr
Reverse RecoveryCharge 110 170 nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
12
2.0
A
S
D
G
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance 6.0
L
D
Internal Drain Inductance 4.0
nH
ns
nA
µA
Ω
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
≤ 1.8A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
