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IRF7103TRPBF

P1-P3P4-P6P7-P9
IRF7103PbF
C,
IRF7103PbF
Fig 10a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
T
A,
Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
IRF7103PbF
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
P1-P3P4-P6P7-P9

IRF7103TRPBF

Mfr. #:
Buy IRF7103TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT DUAL NCh 50V 3.0A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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