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DG2002EDL-T1-GE3

P1-P3P4-P6P7-P9P10-P11
DG2002E
www.vishay.com
Vishay Siliconix
S18-0422-Rev. C, 23-Apr-18
1
Document Number: 76624
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power-off Protection, 6 , 1.8 V to 5.5 V,
SPDT Analog Switch (2:1 Multiplexer)
DESCRIPTION
The DG2002E is a high performance single-pole,
double-throw (SPDT) analog switch designed for 1.8 V to
5.5 V operation with a single power rail.
Fabricated with high density CMOS technology, the device
achieves low on resistance of 6 and switch off
capacitance of 7 pF at a 5 V power supply and low power
consumption, and fast switching speeds. Its charge
injection is 1 pC.
The DG2002E can handle both analog and digital signals
and permits signals with amplitudes of up to V+ to be
transmitted in either direction. Its control logic inputs can go
over V+ up to 5.5 V. It features break before make switching
performance.
A powered-off protection circuit is built into the switch to
prevent an abnormal current flow from COM pin to V+ during
the power-down condition. Each output pin can withstand
greater than 7 kV (human body model).
Operation temperature is specified from -40 °C to +85 °C.
The DG2002E is available in the compact SC-70-6L
package.
FEATURES
• Low switch on-resistance (6 )
• +1.8 V to +5.5 V single supply operation
• Powered-off protection
• Control logic inputs can go over V+
• Low parasitic capacitance, 7 pF at switch off
• Low charge injection, 1 pC
• Break before make switching
• Latch-up performance exceeds 200 mA per JESD 78
• High ESD rating
- 7000 V human body model (JS-001)
- 1000 V charge device model (JS-002)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
APPLICATIONS
• Battery powered devices
• Instrumentation
• Medical equipment
• Low voltage data acquisistion
• Control and automation
• Consumer and computing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Notes
• Logic “0” 0.8 V
• Logic “1” 2.4 V
Available
Available
NO (source
1
)
COM
NC (source
2
)
1
2
3
6
5
Top view
IN
V+
GND
4
SC-70
Device marking: H9
Pin 1
Device marking: H9XXX
XXX = Date / lot traceability code
H9XXX
TRUTH TABLE
LOGIC NC NO
0OnOff
1OfOn
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C SC-70-6 DG2002EDL-T1-GE3
DG2002E
www.vishay.com
Vishay Siliconix
S18-0422-Rev. C, 23-Apr-18
2
Document Number: 76624
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. All leads welded or soldered to PC board
b. Derate 3.1 mW/°C above 70 °C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
V+, COM, NC, NO, IN reference to GND -0.3 to 6 V
Continuous current (any terminal) ± 50
mA
Peak current (pulsed at 1 ms, 10 % duty cycle) ± 200
Storage temperature -65 to +150 °C
Power dissipation (packages)
a
6-pin SC-70
b
250 mW
ESD / HBM JS-001 7000
V
ESD / CDM JS-002 1000
Latch up
Per JESD78 with
1.5 x voltage clamp
200 mA
SPECIFICATIONS (V+ = 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 5 V, ± 10 %
V
IN
= 0.8 V or 2.4 V
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
b
TYP.
c
MAX.
b
Analog Switch
Analog signal range
d
V
NO
, V
NC
V
COM
Full 0 - V+ V
Drain-source on-resistance
d
R
DS(on)
V+ = 4.5 V, V
COM
= 3 V, I
NO
, I
NC
= 10 mA
Room - 6 8
Full - 8 10
R
DS(on)
flatness
d
R
DS(on)
flatness
V+ = 5 V, V
COM
= 1.5 V, 3.5 V, I
NO
, I
NC
= 10 mA Room - 0.4 -
R
DS(on)
match
d
R
DS(on)
V+ = 4.5 V, V
COM
= 3 V, I
NO
, I
NC
= 10 mA Room - 0.04 0.2
Switch-off leakage current
f
I
NO(off)
,
I
NC(off)
V+ = 5.5 V,
V
NO
, V
NC
= 1 V / 4.5 V, V
COM
= 4.5 V / 1 V
Room -1.5 - 1.5
nA
Full -4 - 4
I
COM(off)
Room -1 - 1
Full -4 - 4
Channel-on leakage current
f
I
COM(on)
V+ = 5.5 V,
V
NO
, V
NC
= V
COM
= 1 V / 4.5 V
Room -1 - 1
Full -4 - 4
Power-down leakage I
PD
V+ = 0 V, V
COM
= 5 V, NO/NC open, V
IN
= GND Full - - 2
μA
V+ = 0 V, V
NO
, V
NC
= 5 V, COM open, V
IN
= GND Full - - 2
Digital Control
Input high voltage V
INH
Full 2.4 - -
V
Input low voltage V
INL
Full - - 0.8
Input capacitance
d
C
IN
Full - 6 - pF
Input current I
INL
or I
INH
V
IN
= 0 V or V+ Full -1 - 1 μA
Dynamic Characteristics
Turn-on time
d
t
ON
V
NO
or V
NC
= 3 V, R
L
= 300 , C
L
= 35 pF
Room - 10 30
ns
Full - - 32
Turn-off time
d
t
OFF
Room - 8 24
Full - - 26
Break-before-make time
d
t
BBM
Room 1 - -
Charge injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, V
NO
, V
NC
= 0 V, R
GEN
= 0 Room - 1 - pC
Off-isolation
d
OIRR
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room - -78 -
dB
Crosstalk
d
X
TALK
Room - -77 -
NO, NC off capacitance
d
C
NO(off)
V
IN
= 0 V or V+, f = 1 MHz
Room - 7 -
pFC
NC(off)
Room - 7 -
Channel-on capacitance
d
C
ON
Room - 13 -
Power Supply
Power supply current
d
I+ V
IN
= 0 V or V+ Full - 0.004 1 μA
DG2002E
www.vishay.com
Vishay Siliconix
S18-0422-Rev. C, 23-Apr-18
3
Document Number: 76624
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS (V+ = 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, ± 10 %
V
IN
= 0.4 V or 2 V
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
b
TYP.
c
MAX.
b
Analog Switch
Analog signal range
d
V
NO
, V
NC
V
COM
Full 0 - V+ V
Drain-source on-resistance
d
R
DS(on)
V+ = 2.7 V, V
COM
= 1.5 V, I
NO
, I
NC
= 10 mA
Room - 13 22
Full - 15 24
R
DS(on)
flatness
d
R
DS(on)
flatness
V+ = 3 V, V
COM
= 0 V to V+, I
NO
, I
NC
= 10 mA Room - 1.4 -
R
DS(on)
match
d
R
DS(on)
V+ = 2.7 V, V
COM
= 1.5 V, I
NO
, I
NC
= 10 mA Room - 0.03 0.35
Switch-off leakage current
f
I
NO(off)
,
I
NC(off)
V+ = 3.3 V,
V
NO
, V
NC
= 1 V / 3 V, V
COM
= 3 V / 1 V
Room -0.4 - 0.4
nA
Full -4 - 4
I
COM(off)
Room -0.8 - 0.8
Full -8 - 8
Channel-on leakage current
f
I
COM(on)
V+ = 3.3 V,
V
NO
, V
NC
= V
COM
= 1 V / 3 V
Room -0.8 - 0.8
nA
Full -8 - 8
Digital Control
Input high voltage V
INH
Full 2 - -
V
Input low voltage V
INL
Full - - 0.4
Input capacitance
d
C
IN
Full - 6 - pF
Input current I
INL
or I
INH
V
IN
= 0 V or V+ Full -1 - 1 μA
Dynamic Characteristics
Turn-on time
d
t
ON
V
NO
or V
NC
= 2 V, R
L
= 300 , C
L
= 35 pF
Room - 13 34
ns
Full - - 37
Turn-off time
d
t
OFF
Room - 9 20
Full - - 22
Break-before-make time
d
t
BBM
Room 1 - -
Charge injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, V
NO
, V
NC
= 0 V, R
GEN
= 0 Room - 0.9 - pC
Off-isolation
d
OIRR
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room - -78 -
dB
Crosstalk
d
X
TALK
Room - -77 -
NO, NC off capacitance
d
C
NO(off)
V
IN
= 0 V or V+, f = 1 MHz
Room - 7 -
pFC
NC(off)
Room - 7 -
Channel-on capacitance
d
C
ON
Room - 14 -
Power Supply
Power supply current
d
I+ V
IN
= 0 V or V+ Full - 0.002 1 μA
P1-P3P4-P6P7-P9P10-P11

DG2002EDL-T1-GE3

Mfr. #:
Buy DG2002EDL-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs SPDT 2:1 Multiplxr 6ohm 1.8-5.5V; SC-70
Lifecycle:
New from this manufacturer.
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