DG2002E
www.vishay.com
Vishay Siliconix
S18-0422-Rev. C, 23-Apr-18
5
Document Number: 76624
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, full = as determined by the operating suffix
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
c. Typical values are for design aid only, not guaranteed nor subject to production testing
d. Guarantee by design, nor subjected to production test
e. V
IN
= input voltage to perform proper function
f. Guaranteed by 5 V leakage testing, not production tested
SPECIFICATIONS (V+ = 2 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 2 V, ± 10 %
V
IN
= 0.4 V or 1.6 V
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
b
TYP.
c
MAX.
b
Analog Switch
Analog signal range
d
V
NO
, V
NC
V
COM
Full 0 - V+ V
Drain-source on-resistance
d
R
DS(on)
V+ = 1.8 V, V
COM
= 1 V, I
NO
, I
NC
= 10 mA
Room - 37 42
Full
d
-3644
R
DS(on)
flatness
d
R
DS(on)
flatness
V+ = 2 V, V
COM
= 0 V to V+, I
NO
, I
NC
= 10 mA Room - 3 -
R
DS(on)
match
d
R
DS(on)
V+ = 1.8 V, V
COM
= 1 V, I
NO
, I
NC
= 10 mA Room - 0.04 0.5
Switch-off leakage current
f
I
NO(off)
,
I
NC(off)
V+ = 2.2 V,
V
NO
, V
NC
= 0.5 V / 1.5 V, V
COM
= 1.5 V / 0.5 V
Room -0.2 - 0.2
nA
Full
d
-3 - 3
I
COM(off)
Room -0.2 - 0.2
Full
d
-3 - 3
Channel-on leakage current
f
I
COM(on)
V+ = 2.2 V,
V
NO
, V
NC
= V
COM
= 0.5 V / 1.5 V
Room -0.2 - 0.2
nA
Full
d
-3 - 3
Digital Control
Input high voltage V
INH
Full 1.6 - -
V
Input low voltage V
INL
Full - - 0.4
Input capacitance
d
C
IN
Full - 6 - pF
Input current I
INL
or I
INH
V
IN
= 0 V or V+ Full -1 - 1 μA
Dynamic Characteristics
Turn-on time
d
t
ON
V
NO
or V
NC
= 1.5 V, R
L
= 300 , C
L
= 35 pF
Room - 21 40
ns
Full
d
--42
Turn-off time
d
t
OFF
Room - 13 20
Full
d
--21
Break-before-make time
d
t
BBM
Room 1 - -
Charge injection
d
Q
INJ
C
L
= 1 nF, V
GEN
= 0 V, V
NO
, V
NC
= 0 V, R
GEN
= 0 Room - 0.8 - pC
Off-isolation
d
OIRR
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room - -78 -
dB
Crosstalk
d
X
TALK
Room - -77 -
NO, NC off capacitance
d
C
NO(off)
V
IN
= 0 V or V+, f = 1 MHz
Room - 7 -
pFC
NC(off)
Room - 7 -
Channel-on capacitance
d
C
ON
Room - 14 -
Power Supply
Power supply current
d
I+ V
IN
= 0 V or V+ Full - - 1 μA
