MTP12P10G Datasheet MTP12P10G | P1-P3

June, 2006 − Rev. 4

1 Publication Order Number:

MTP12P10/D

MTP12P10

Preferred Device

Power MOSFET

12 Amps, 100 Volts

P−Channel TO−220

This Power MOSFET is designed for medium voltage, high speed

power switching applications such as switching regulators, converters,

solenoid and relay drivers.

Features

• Silicon Gate for Fast Switching Speeds − Switching Times Specified

at 100°C

• Designer’s Data − I

DSS

, V

DS(on)

, V

GS(th)

and SOA Specified

at Elevated Temperature

• Rugged − SOA is Power Dissipation Limited

• Source−to−Drain Diode Characterized for Use With Inductive Loads

• Pb−Free Package is Available*

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain−Source Voltage V

DSS

100 Vdc

Drain−Gate Voltage (R

= 1.0 MW)

DGR

100 Vdc

Gate−Source Voltage

− Continuous

− Non−repetitive (t

≤ 50 ms)

GSM

± 20

± 40

Vdc

Vpk

Drain Current − Continuous

Drain Current − Pulsed

Adc

Total Power Dissipation

Derate above 25°C

0.6

W/°C

Operating and Storage Temperature Range T

, T

stg

−65 to 150 °C

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient°

1.67

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

12 AMPERES, 100 VOLTS

DS(on)

= 300 mW

Device Package Shipping

ORDERING INFORMATION

MTP12P10 TO−220AB 50 Units/Rail

TO−220AB

CASE 221A

STYLE 5

P−Channel

MARKING DIAGRAM

AND PIN ASSIGNMEN

MTP12P10 = Device Code

A = Location Code

Y = Year

WW = Work Week

G = Pb−Free Package

MTP12P10G

AYWW

Gate

Source

Drain

Preferred devices are recommended choices for future use

and best overall value.

MTP12P10G TO−220AB

(Pb−Free)

50 Units/Rail

http://onsemi.com

MTP12P10

http://onsemi.com

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage (V

= 0, I

= 0.25 mA) V

(BR)DSS

100 − Vdc

Zero Gate Voltage Drain Current

= Rated V

DSS

, V

= 0)

= Rated V

DSS

, V

= 0, T

= 125°C)

DSS

−

100

mAdc

Gate−Body Leakage Current, Forward (V

GSF

= 20 Vdc, V

= 0) I

GSSF

− 100 nAdc

Gate−Body Leakage Current, Reverse (V

GSR

= 20 Vdc, V

= 0) I

GSSR

− 100 nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage (V

= V

, I

= 1.0 mA)

= 100°C

GS(th)

2.0

1.5

4.5

4.0

Vdc

Static Drain−Source On−Resistance (V

= 10 Vdc, I

= 6.0 Adc) R

DS(on)

− 0.3

Drain−Source On−Voltage (V

= 10 V)

= 12 Adc)

= 6.0 Adc, T

= 100°C)

DS(on)

−

4.2

3.8

Vdc

Forward Transconductance (V

= 15 V, I

= 6.0 A) g

2.0 − mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

= 25 V, V

= 0, f = 1.0 MHz)

See Figure 10

iss

− 920 pF

Output Capacitance C

oss

− 575

Reverse Transfer Capacitance C

rss

− 200

SWITCHING CHARACTERISTICS (Note 1) (T

= 100°C)

Turn−On Delay Time

= 25 V, I

= 0.5 Rated I

, R

= 50 W)

See Figures 12 and 13

d(on)

− 50 ns

Rise Time t

− 150

Turn−Off Delay Time t

d(off)

− 150

Fall Time t

− 150

Total Gate Charge

= 0.8 Rated V

DSS

, I

= Rated I

, V

= 10 V

)

See Figure 11

33 (Typ) 50 nC

Gate−Source Charge Q

16 (Typ) −

Gate−Drain Charge Q

17 (Typ) −

SOURCE−DRAIN DIODE CHARACTERISTICS (Note 1)

Forward On−Voltage

= Rated I

, V

= 0)

4.0 (Typ) 5.5 Vdc

Forward Turn−On Time t

Limited by stray inductance

Reverse Recovery Time t

300

(Typ)

− ns

INTERNAL PACKAGE INDUCTANCE (TO−204)

Internal Drain Inductance, (Measured from the contact screw on the header closer to the

source pin and the center of the die)

5.0 (Typ) −

Internal Source Inductance

(Measured from the source pin, 0.25″ from the package

to the source bond pad)

12.5

(Typ)

−

INTERNAL PACKAGE INDUCTANCE (TO−220)

Internal Drain Inductance

(Measured from the contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

3.5 (Typ)

4.5 (Typ)

−

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

7.5 (Typ) −

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

MTP12P10

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

−V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

, JUNCTION TEMPERATURE (°C)

Figure 2. Gate−Threshold Voltage Variation

With Temperature

, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 3. Transfer Characteristics

, JUNCTION TEMPERATURE (°C)

Figure 4. Normalized Breakdown Voltage

versus Temperature

, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance versus Drain Current

, JUNCTION TEMPERATURE (°C)

Figure 6. On−Resistance Variation

With Temperature

−I

, DRAIN CURRENT (AMPS)R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (OHMS)

DS(on)

, DRAIN−TO−SOURCE RESISTANCE

(NORMALIZED)

, DRAIN CURRENT (AMPS)

GS(th)

, GATE THRESHOLD VOLTAGE (NORMALIZED)

BR(DSS)

, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE

(NORMALIZED)

109876543210

1.2

1.1

0.9

0.8

−50 −25 0 25 50 75 100 125 150

201612840

1.6

1.2

0.8

0.4

−50 −75 0 25 50 75 100 125 150

0.5

0.4

0.3

0.2

0.1

4036322824201612840

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

−50 −25 0 25 50 75 100 125 150

= 25°C

= −20 V

8 V

10 V

7 V

6 V

5 V

= V

= 1 mA

= 20 V

= −55°C

25°C

100°C

= 0

= 0.25 mA

= 100°C

25°C

−55°C

= 15 V

= 10 V

= 6 A

P1-P3 P4-P6

MTP12P10G

Mfr. #:

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Manufacturer:

ON Semiconductor

Description:

MOSFET P-CH 100V 12A TO220AB

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