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NTHD4401PT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
1 Publication Order Number:
NTHD4401P/D
NTHD4401P
Power MOSFET
−20 V, −3.0 A, Dual P−Channel, ChipFETt
Features
• Low R
DS(on)
and Fast Switching Speed in a ChipFET Package
• Leadless ChipFET Package 40% Smaller Footprint than TSOP−6
• ChipFET Package with Excellent Thermal Capabilities where Heat
Transfer is Required
• Pb−Free Package is Available
Applications
• Charge Control in Battery Chargers
• Optimized for Battery and Load Management Applications in
Portable Equipment
• MP3 Players, Cell Phones, Digital Cameras, PDAs
• Buck and Boost DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
−20 V
Gate−to−Source Voltage V
GS
"12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−2.1
A
T
A
= 85°C −1.5
t v 5 s T
A
= 25°C −3.0
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C
P
D
1.1
W
T
A
= 85°C 0.6
t v 5 s T
A
= 25°C 2.1
Pulsed Drain Current
tp = 10 ms
I
DM
−9.0 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
−2.5 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Rating Symbol Value Unit
Junction−to−Ambient − Steady State (Note 1) R
q
JA
110
°C/W
Junction−to−Ambient − t v 5 s 60
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
P−Channel MOSFET
Device Package Shipping
†
ORDERING INFORMATION
NTHD4401PT1 ChipFET 3000/Tape & Ree
l
http://onsemi.com
S
1
G
1
D
1
P−Channel MOSFE
T
S
2
G
2
D
2
−20 V
200 mW @ −2.5 V
130 mW @ −4.5 V
R
DS(on)
TYP
−3.0 A
I
D
MAXV
(BR)DSS
NTHD4401PT1G ChipFET
(Pb−Free)
3000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
ChipFET
CASE 1206A
STYLE 2
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
8
7
6
5
5
6
7
81
2
3
4
C4 = Specific Device Code
M = Month Code
G = Pb−Free Package
C4 M
G
NTHD4401P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(Br)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 −23 V
Drain−to−Source Breakdown Voltage Tem-
perature Coefficient
V
(Br)DSS
/T
J
−8.0 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V T
J
= 25°C −1.0 mA
V
DS
= −16 V T
J
= 85°C −5.0
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= "12 V "100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
GS(th)
V
GS
= V
DS
, I
D
= −250 mA
−0.6 −0.75 −1.2 V
Gate Threshold Temperature Coefficient V
GS(th)
/T
J
2.65 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −2.1 A
V
GS
= −2.5 V, I
D
= −1.7 A
V
GS
= −1.8 V, I
D
= −1.0 A
0.130
0.200
0.34
0.155
0.240
W
Forward Transconductance g
FS
V
DS
= −10 V, I
D
= −2.1 A 5.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −10 V
185 300
pF
Output Capacitance C
oss
95 150
Reverse Transfer Capacitance C
rss
30 50
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −10 V,
I
D
= −2.1 A
3.0 6.0
nC
Threshold Gate Charge Q
G(TH)
0.2
Gate−to−Source Charge Q
GS
0.5
Gate−to−Drain Charge Q
GD
0.9
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time t
d(on)
V
GS
= −4.5 V, V
DD
= −16 V,
I
D
= −2.1 A, R
G
= 2.5 W
7.0 12
ns
Rise Time t
r
13 25
Turn−Off Delay Time t
d(off)
33 50
Fall Time t
f
27 40
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V
I
S
= −2.5 A
−0.85 −1.15
V
Reverse Recovery Time t
rr
V
GS
= 0 V, dI
S
/dt = 90 A/ms,
I
S
= −2.1 A
32
ns
Charge Time t
a
10
Discharge Time t
b
22
Reverse Recovery Charge Q
RR
15 nC
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTHD4401P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
−2 V
100°C
0
4
5
3
632
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
2
1
0
1
Figure 1. On−Region Characteristics
0.5
4
21.5 2.5
3
2
1
1
0
3
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.1
35
0.3
0.2
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
−I
D,
DRAIN CURRENT (AMPS)
0.5 4.5
0.15
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.5
24
T
C
= −55°C
I
D
= −2.1 A
T
J
= 25°C
0.25
0.1
75 150
T
J
= 25°C
I
D
= −2.1 A
V
GS
= −4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
1.6
V
GS
= −4.5 V
−1.2 V
16
−1.4 V
−1.6 V
−1.8 V
0.225
0.125
0.2
V
GS
= −2.5 V
78
−2.2 V
V
DS
≥ −10 V
0.4
1.5 2.5 3.5
0.175
V
GS
= −2.4 V
V
GS
= −6 V to −3 V
0.8
1
1.2
−50 −25 0 25 50 75 100 125 150
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= −1.0 A
V
GS
= −1.8 V
Figure 6. On−Resistance Variation with
Temperature
P1-P3P4-P6

NTHD4401PT3G

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Manufacturer:
ON Semiconductor
Description:
MOSFET -20V -3A Dual P-Channel
Lifecycle:
New from this manufacturer.
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