SI1013R-T1-GE3 Datasheet SI1013X-T1-GE3, SI1013R-T1-GE3, SI1013X-T1-E3 | P1-P3

Vishay Siliconix

Si1013R/X

Document Number: 71167

S10-2432-Rev. D, 25-Oct-10

www.vishay.com

1

P-Channel 1.8 V (G-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• High-Side Switching

• Low On-Resistance: 1.2 

• Low Threshold: 0.8 V (Typ.)

• Fast Switching Speed: 14 ns

• 1.8 V Operation

•TrenchFET

®

Power MOSFETs

• 2000 V ESD Protection

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

• Battery Operated Systems

• Power Supply Converter Circuits

• Load/Power Switching Cell Phones, Pagers

BENEFITS

• Ease in Driving Switches

• Low Offset (Error) Voltage

• Low-Voltage Operation

• High-Speed Circuits

• Low Battery Voltage Operation

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

()I

D

(mA)

- 20

1.2 at V

GS

= - 4.5 V

- 350

1.6 at V

GS

= - 2.5 V

- 300

2.7 at V

GS

= - 1.8 V

- 150

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface mounted on FR4 board.

SC-75A or SC-89

Top V i ew

2

1

S

D

G

3

Ordering Information:

Si1013R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free)

Si1013X-T1-GE3 (SC-89, Lead (Pb)-free and Halogen-free)

SC-75A (SOT-416):

Si1013R - Marking Code D

SC-89 (SOT-490):

Si1013X - Marking Code B

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

- 20

V

Gate-Source Voltage

V

GS

± 6

Continuous Drain Current (T

J

= 150 °C)

b

T

A

= 25 °C

I

D

- 400 - 350

mA

T

A

= 85 °C

- 300 - 275

Pulsed Drain Current

a

I

DM

- 1000

Continuous Source Current (Diode Conduction)

b

I

S

- 275 - 250

Maximum Power Dissipation

b

for SC-75

T

A

= 25 °C

P

D

175 150

mW

T

A

= 85 °C

90 80

Maximum Power Dissipation

b

for SC-89

T

A

= 25 °C

275 250

T

A

= 85 °C

160 140

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V

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Document Number: 71167

S10-2432-Rev. D, 25-Oct-10

Vishay Siliconix

Si1013R/X

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

For the following graphs, P-Channel negative polarities for all voltage and current values are represented as positive values.

SPECIFICATIONS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.45 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 4.5 V

± 1 ± 2 µA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 16 V, V

GS

= 0 V

- 0.3 - 100 nA

V

DS

= - 16 V, V

GS

= 0 V, T

J

= 85 °C

- 5 µA

On-State Drain Current

a

I

D(on)

V

DS

= - 5 V, V

GS

= - 4.5 V

- 700 mA

Drain-Source On-State

Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 350 mA

0.8 1.2



V

GS

= - 2.5 V, I

D

= - 300 mA

1.2 1.6

V

GS

= - 1.8 V, I

D

= - 150 mA

1.8 2.7

Forward Transconductance

a

g

fs

V

DS

= - 10 V, I

D

= - 250 mA

0.4 S

Diode Forward Voltage

a

V

SD

I

S

= - 150 mA, V

GS

= 0 V

- 0.8 - 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 10 V, V

GS

= - 4.5 V, I

D

= - 250 mA

1500

pCGate-Source Charge

Q

gs

150

Gate-Drain Charge

Q

gd

450

Tur n - O n D e lay Ti m e

t

d(on)

V

DD

= - 10 V, R

L

= 47 

I

D

 - 200 mA, V

GEN

= - 4.5 V, R

g

= 10 

5

ns

Rise Time

t

r

9

Turn-Off Delay Time

t

d(off)

35

Fall Time

t

f

11

Output Characteristics

0.0

0.2

0.4

0.6

0.8

1

.

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

GS

= 5 V thru 3 V

2 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

1.8 V

2.5 V

Transfer Characteristics

0

200

400

600

800

1000

0.0 0.5 1.0 1.5 2.0 2.5 3.0

T

J

= - 55 °C

125 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (mA)I

D

Document Number: 71167

S10-2432-Rev. D, 25-Oct-10

www.vishay.com

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Vishay Siliconix

Si1013R/X

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

On-Resistance vs. Drain Current

Gate Charge

Surge-Drain Diode Forward Voltage

- On-Resistance ()R

DS(on)

0.0

0.8

1.6

2.4

3.2

4.0

0 200 400 600 800 1000

I

D

- Drain Current (mA)

V

GS

= 1.8 V

V

GS

= 4.5 V

V

GS

= 2.5 V

0

1

2

3

4

5

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V

DS

= 10 V

I

D

= 250 mA

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

1000

1

V

SD

- Source-to-Drain Voltage (V)

T

J

= 125 °C

T

J

= 25 °C

T

J

= - 55 °C

10

100

I

S

- Source Current (mA)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

20

40

60

80

100

120

0 4 8 12 16 20

V

DS

- Drain-to-Source Voltage (V)

C

rss

C

os s

C

is s

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125

V

GS

= 4.5 V

I

D

= 350 mA

T

J

- Junction Temperature (°C)

(Normalized)

- On-Resistance R

DS(on)

V

GS

= 1.8 V

I

D

= 150 mA

0

1

2

3

4

5

0123456

I

D

= 350 mA

- On-Resistance ()R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

I

D

= 200 mA

SI1013R-T1-GE3

SI1013R-T1-GE3

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