SI1013R-T1-GE3

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4
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
Vishay Siliconix
Si1013R/X
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Threshold Voltage Variance vs. Temperature
I
GSS
vs. Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125
T
J
- Temperature (°C)
I
GS S
- (µA)
V
GS
= 4.5 V
BV
GSS
vs. Temperature
0
1
2
3
4
5
6
7
- 50 - 25 0 25 50 75 100 125
T
J
- Temperature (°C)
BV
GS S
- Gate-to-Source Breakdown Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient (SC-75A)
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th JA
= 833 °C/W
3. T
JM
- T
A
= P
DM
Z
th JA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
www.vishay.com
5
Vishay Siliconix
Si1013R/X
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?71167
.
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Thermal Impedance
Package Information
www.vishay.com
Vishay Siliconix
C15-1445-Rev. F, 23-Nov-15
1
Document Number: 71348
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SC-75A: 3 Leads
DWG: 5868
Notes
Dimensions in millimeters will govern.
1.Dimension D does not include mold flash, protrusions or gate
burrs. Mold flash protrusions or gate burrs shall not exceed
0.10 mm per end. Dimension E1 does not include Interlead flash
or protrusion. Interlead flash or protrusion shall not exceed
0.10 mm per side.
2.Dimensions D and E1 are determined at the outmost extremes of
the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
3.Datums A, B and D to be determined 0.10 mm from the lead tip.
4.Terminal positions are shown for reference only.
5.These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
C
M
BA –
2X
1 2
3
A
1
2
D
C
bbb
4
B
3
D
3
D
D
D
bbb
D
bbb
D
e2
B1(b1)
3
e1
2XB1
E1
2X
e3
2
E
E/2
D
bbb
4X
D
Seating Plane
A
A2
A1
Base Metal
With Tin Planting
Section B-B
5
B1
b1
C
c1
L2
L
L1
B
B
2X
1
ddd
C
C
1
1
DIMENSIONS TOLERANCES
aaa 0.10
bbb 0.10
ccc 0.10
ddd 0.10
DIM.
MILLIMETERS
NOTE
MIN. NOM. MAX.
A- -0.80
A1 0.00 - 0.10
A2 0.65 0.70 0.80
B1 0.19 - 0.24 5
b1 0.17 - 0.21
c0.13-0.155
c1 0.10 - 0.12 5
D 1.48 1.575 1.68 1, 2
E 1.50 1.60 1.70
E1 0.66 0.76 0.86 1, 2
e1 0.50 BSC
e2 1.00 BSC
e3 0.50 BSC
L 0.15 0.205 0.30
L1 0.40 ref.
L2 0.15 BSC
q0°-8°
q1 - 10°

SI1013R-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 350mA 175mW 1.2 ohms @ 4.5V
Lifecycle:
New from this manufacturer.
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