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IRFH8318TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 9
Features and Benefits
Applications
• Synchronous MOSFET for high frequency buck converters
PQFN 5X6 mm
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C(Bottom)
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
C(Bottom)
= 25°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
Storage Temperature Range
V
W
A
°C
Max.
27
76
400
± 20
30
21
120
50
-55 to + 150
3.6
0.029
59
V
DS
30 V
V
gs max
± 20
V
R
DS(on) max
(@V
GS
= 10V)
3.1
(@V
GS
= 4.5V)
4.6
Q
g typ
19 nC
I
D
(@T
c(Bottom)
= 25°C)
50 A
m
Ω
Features
Benefits
Low Thermal Resistance to PCB (< 1.7°C/W)
Enable better thermal dissipation
Low Profile (<1.2mm)
results in
Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Environmentally Friendlier
MSL1, Consumer Qualification
Increased Reliability
IRFH8318PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014
Form Quantity
IRFH8318TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH8318TR2PBF
PQFN 5mm x 6mm Tape and Reel 400
EOL notice # 259
Orderable part number Package Type
Standard Pack
Note
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014
IRFH8318PbF
D
S
G
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(Bottom)
Junction-to-Case
–––
1.7
R
θJC
(Top)
Junction-to-Case
–––
32
°C/W
R
θJA
Junction-to-Ambient
–––
35
R
θJA
(<10s)
Junction-to-Ambient
–––
22
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.5 3.1
––– 3.6 4.6
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 81 ––– ––– S
Q
g
Total Gate Charge ––– 41 ––– nC
Q
g
Total Gate Charge ––– 19 –––
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 5.8 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.3 –––
Q
gd
Gate-to-Drain Charge ––– 4.4 –––
Q
godr
Gate Charge Overdrive ––– 6.5 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 6.7 –––
Q
oss
Output Charge ––– 18 ––– nC
R
G
Gate Resistance ––– 1.7
–––
Ω
t
d(on)
Turn-On Delay Time ––– 15 –––
t
r
Rise Time ––– 33 –––
t
d(off)
Turn-Off Delay Time ––– 18 –––
t
f
Fall Time ––– 12 –––
C
iss
Input Capacitance –––
3180
–––
C
oss
Output Capacitance –––
700
–––
C
rss
Reverse Transfer Capacitance –––
270
–––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 16 24 ns
Q
rr
Reverse Recovery Charge ––– 35 53 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 15V
–––
V
GS
= 20V
V
GS
= -20V
––– ––– 400
––– ––– 50
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 20A
Conditions
Max.
160
20
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 380A/μs
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Typ.
–––
R
G
=1.8
Ω
V
DS
= 10V, I
D
= 20A
I
D
= 20A
I
D
= 20A
V
GS
= 0V
V
DS
= 10V
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
V
DS
= V
GS
, I
D
= 50μA
μA
V
GS
= 4.5V, I
D
= 16A
V
GS
= 4.5V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
m
Ω
V
DS
= 24V, V
GS
= 0V
V
GS
= 10V, V
DS
= 15V, I
D
= 20A
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014
IRFH8318PbF
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs.Gate-to-Source VoltageFig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
7.00V
5.00V
4.50V
3.50V
3.00V
2.75V
BOTTOM 2.50V
≤
60μs
PULSE WIDTH
Tj = 25°C
2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
7.00V
5.00V
4.50V
3.50V
3.00V
2.75V
BOTTOM 2.50V
≤
60μs
PULSE WIDTH
Tj = 150°C
2.5V
1 2 3 4 5 6
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
≤60μs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 20A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 102030405060
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
V
DS
= 6.0V
I
D
= 20A
P1-P3P4-P6P7-P9

IRFH8318TRPBF

Mfr. #:
Buy IRFH8318TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC
Lifecycle:
New from this manufacturer.
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