4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 13, 2014
IRFH8318PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage vs. Temperature
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
G
S
(
t
h
)
,
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 50μA
I
D
= 250μA
I
D
= 1.0mA
I
D
= 1.0A
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
SD
, Source-to-Drain Voltage (V)
1.0
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
25 50 75 100 125 150
T
C
, Case Temperature (°C)
0
20
40
60
80
100
120
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Source
Bonding Technology
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100μsec
1msec
10msec
DC
Limited By Source
Bonding Technology
