NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
PMC85XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 15 May 2013 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P-channel Trench MOSFET
V
DS
drain-source voltage - -30 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 12 V
V
GS
= -4.5 V; T
amb
= 25 °C; t ≤ 5 s [1] - -3.4 A
V
GS
= -4.5 V; T
amb
= 25 °C [1] - -2.6 A
I
D
drain current
V
GS
= -4.5 V; T
amb
= 100 °C [1] - -1.6 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - -8 A
[2] - 485 mWT
amb
= 25 °C
[1] - 1170 mW
P
tot
total power dissipation
T
sp
= 25 °C [2] - 8300 mW
P-channel Trench MOSFET; source-drain diode
I
S
source current T
amb
= 25 °C [1] - -1.2 A
NPN RET
V
CBO
collector-base voltage T
amb
= 25 °C; open emitter - 50 V
V
CEO
collector-emitter voltage T
amb
= 25 °C; open base - 50 V
V
EBO
emitter-base voltage T
amb
= 25 °C; open collector - 10 V
positive - 30 VV
I
input voltage
negative - -5 V
I
O
output current - 100 mA
I
CM
peak collector current - 100 mA
[2] - 465 mWT
amb
= 25 °C
[1] - 985 mW
P
tot
total power dissipation
T
sp
= 25 °C [2] - 4160 mW
Per device
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
for drain 6 cm
2
[2] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.
