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PMC85XP,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
PMC85XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 15 May 2013 6 / 15
017aaa399
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
-1
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for drain 6 cm
2
Fig. 5. P-channel Trench MOSFET: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
P-channel Trench MOSFET; static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= -250 µA; V
GS
= 0 V; T
j
= 25 °C -30 - - V
V
GSth
gate-source threshold
voltage
I
D
= -250 mA; V
DS
= V
GS
; T
j
= 25 °C -0.45 -0.78 -1 V
V
DS
= -30 V; V
GS
= 0 V; T
amb
= 25 °C - - -1 µAI
DSS
drain leakage current
V
DS
= -30 V; V
GS
= 0 V; T
amb
= 150 °C - - -11 µA
V
GS
= 12 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nAI
GSS
gate leakage current
V
GS
= -12 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nA
V
GS
= -4.5 V; I
D
= -2.6 A; T
j
= 25 °C - 85 110 mΩ
V
GS
= -4.5 V; I
D
= -2.6 A; T
j
= 150 °C - 133 173 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -2.5 V; I
D
= -1.5 A; T
j
= 25 °C - 105 140 mΩ
g
fs
transfer conductance V
DS
= -10 V; I
D
= -2.6 A; T
j
= 25 °C - 10 - S
P-channel Trench MOSFET; dynamic characteristics
Q
G(tot)
total gate charge - 5.2 7.8 nC
Q
GS
gate-source charge - 1.1 - nC
Q
GD
gate-drain charge
V
DS
= -15 V; I
D
= -2.6 A; V
GS
= -4.5 V;
T
j
= 25 °C
- 0.95 - nC
C
iss
input capacitance - 680 - pF
C
oss
output capacitance
V
DS
= -15 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 54 - pF
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
PMC85XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 15 May 2013 7 / 15
Symbol Parameter Conditions Min Typ Max Unit
C
rss
reverse transfer
capacitance
- 40 - pF
t
d(on)
turn-on delay time - 3 - ns
t
r
rise time - 15 - ns
t
d(off)
turn-off delay time - 112 - ns
t
f
fall time
V
DS
= -15 V; I
D
= -2.6 A; R
G(ext)
= 6 Ω;
V
GS
= -4.5 V; T
j
= 25 °C
- 48 - ns
P-channel Trench MOSFET; source-drain diode
V
SD
source-drain voltage I
S
= -1.2 A; V
GS
= 0 V; T
j
= 25 °C - -0.8 -1.2 V
NPN RET
I
CBO
collector-base cut-off
current
V
CB
= 50 V; I
E
= 0 A; T
j
= 25 °C - - 100 nA
V
CE
= 30 V; I
B
= 0 A; T
j
= 25 °C - - 1 µAI
CEO
collector-emitter cut-off
current
V
CE
= 30 V; I
B
= 0 A; T
j
= 150 °C - - 50 µA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
j
= 25 °C - - 170 µA
h
FE
DC current gain V
CE
= 5 V; I
C
= 10 mA; T
j
= 25 °C 100 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 5 mA; I
B
= 0.25 mA; T
j
= 25 °C - - 100 mV
V
I(off)
off-state input voltage I
C
= 100 µA; V
CE
= 5 V; T
j
= 25 °C - 0.6 0.5 V
V
I(on)
on-state input voltage I
C
= 5 mA; V
CE
= 0.3 V; T
j
= 25 °C 1.3 0.9 - V
R1 bias resistor 1 3.3 4.7 6.1 kΩ
R2 bias resistor 2 - 47 - kΩ
R2/R1 bias resistor ratio 8 10 12
C
C
collector capacitance I
E
= 0 A; i
e
= 0 A; f = 1 MHz; T
j
= 25 °C;
V
CB
= 10 V
- - 2.5 pF
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
PMC85XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 15 May 2013 8 / 15
V
DS
(V)
0 -2.0-1.5-0,5 -1.0
aaa-003662
-2
-3
-1
-4
-5
I
D
(A)
0
V
GS
= -1.7 V
-4.5 V -2.5 V
-1.8 V
-1.5 V
-1.2 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa401
-10
-4
-10
-3
I
D
(A)
-10
-5
V
GS
(V)
0 -0.25-0.10-0.50 -0.75-0.25
(1) (2) (3)
T
j
= 25 °C; V
DS
= −5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig. 7. Subthreshold drain current as a function of
gate-source voltage
I
D
(A)
0 -5-4-2 -3-1
aaa-003663
100
200
300
R
DSon
(mΩ)
0
V
GS
= -1.6 V
-1.8 V
-2.0 V
-2.5 V
-4.5 V
T
j
= 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
aaa-003664
V
GS
(V)
0 -6-4-2
200
100
300
400
R
DSon
(mΩ)
0
T
j
= 25 °C
T
j
= 150 °C
I
D
= -1 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PMC85XP,115

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Manufacturer:
Nexperia
Description:
MOSFET 30V P-channel MOSFET
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