1997 Feb 19 2
Philips Semiconductors Product specification
NPN microwave power transistor MX0912B351Y
FEATURES
• Interdigitated structure; high emitter efficiency
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics
and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Input and output matching cell allows an easier design
of circuits.
APPLICATIONS
Intended for use in common base class C broadband
pulse power amplifier from 960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package, with base
connected to flange. It is mounted in common base
configuration and specified in class C.
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
Fig.1 Simplified outline and symbol.
lumns
e
c
b
MAM045
1
2
Top view
33
QUICK REFERENCE DATA
Microwave performance up to T
mb
=25°C in a common base class C broadband amplifier.
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
po
(dB)
η
C
(%)
Z
i
/Z
L
(Ω)
Class C
t
p
=10µs; δ = 10%
0.960 to 1.215 50 >325 >7 >40 see Figs 7 and 8
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
