1997 Feb 19 4
Philips Semiconductors Product specification
NPN microwave power transistor MX0912B351Y
THERMAL CHARACTERISTICS
T
j
= 125 °C unless otherwise specified.
Notes
1. See “
Mounting recommendations in the General part of handbook SC19a”
.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
T
mb
=25°C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
=25°C measured in the test circuit as shown in Fig.6 and working in class C
broadband in pulse mode; note 1.
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. V
CC
during pulse.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
thermal resistance from junction to mounting base CW 1.7 K/W
R
th mb-h
thermal resistance from mounting base to heatsink CW; note 1 0.2 K/W
Z
th j-h
thermal impedance from junction to heatsink t
p
=10µs; δ = 10%
notes 1 and 2
0.13 K/W
SYMBOL PARAMETER CONDITIONS MAX. UNIT
I
CBO
collector cut-off current V
CB
=65V; I
E
= 0 140 mA
V
CB
=50V; I
E
= 0 14 mA
I
CES
collector cut-off current V
CE
=60V; R
BE
=0Ω 140 mA
I
EBO
emitter cut-off current V
EB
= 1.5 V; I
C
= 0 1.4 mA
MODE OF OPERATION
f
(GHz)
V
CC
(V)
(2)
P
L
(W)
G
po
(dB)
η
C
(%)
Z
i
/Z
L
(Ω)
Class C;
t
p
=10µs; δ = 10%
0.960 to 1.215 50 >325
typ. 375
>7
typ. 7.6
>40
typ. 47
see Figs 7 and 8
t
p
= 300 µs; δ = 10%;
see Fig.5
1.03 to 1.09 50 typ. 350 typ. 8 typ. 48
