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IXBT42N170A

P1-P3P4-P6
© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 1700 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 1700 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C 42 A
I
C90
T
C
= 90°C 21 A
I
CM
T
C
= 25°C, 1ms 265 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 10Ω I
CM
= 84 A
(RBSOA) Clamped Inductive Load 1360 V
T
SC
V
GE
= 15 V, V
CES
=
1200V, T
J
= 125°C
(SCSOA) R
G
= 10Ω, non repetitive 10 µs
P
C
T
C
= 25°C 357 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10 seconds 260 °C
M
d
Mounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-268 4 g
TO-247 6 g
DS98939A(11/12)
IXBT42N170A
IXBH42N170A
V
CES
= 1700V
I
C90
= 21A
V
CE(sat)
≤≤
≤≤
≤ 6.0V
t
fi
= 20ns
High Voltage, High Gain
BIMOSFET
TM
Monolithic
Bipolar MOS Transistor
Features
z
High Blocking Voltage
z
International Standard Packages
z
Anti-Parallel Diode
z
Low Conduction Losses
Advantages
z
Low Gate Drive Requirement
z
High Power Density
Applications
z
Switch-Mode and Resonant-Mode
Power Supplies
z
Uninterruptible Power Supplies (UPS)
z
AC Motor Drives
z
Capacitor Discharge Circuits
z
AC Switches
G = Gate C = Collector
E = Emiiter Tab = Collector
TO-247 (IXBH)
G
E
C (Tab)
C
TO-268 (IXBT)
E
G
C (Tab)
Preliminary Technical Information
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250µA, V
GE
= 0V 1700 V
V
GE(th)
I
C
= 750µA, V
CE
= V
GE
2.5 5.5 V
I
CES
V
CE
= 0.8 • V
CES
, V
GE
= 0V 50 µA
T
J
= 125°C 1.5 mA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15V, Note 1 5.2 6.0 V
T
J
= 125°C 5.3 V
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N170A
IXBH42N170A
Note 1: Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Reverse Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= I
C90
, V
GE
= 0V 5.0 V
t
rr
330 ns
I
RM
15 A
I
F
= 25A, V
GE
= 0V, -di
F
/dt = 50A/µs
V
R
= 100V, V
GE
= 0V
TO-247 Outline
Terminals: 1 - Gate 2 - Collector
3 - Emitter
TO-268 Outline
Terminals: 1 - Gate 2,4 - Collector
3 - Emitter
e
∅ P
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= I
C90
, V
CE
= 10V, Note 1 14 23 S
C
ie
s
3920 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 275 pF
C
res
107 pF
Q
g(on)
188 nC
Q
ge
I
C
= I
C90
, V
GE
= 15V, V
CE
= 0.5 • V
CES
23 nC
Q
gc
80 nC
t
d(on)
19 ns
t
ri
17 ns
E
on
3.43 mJ
t
d(off)
200 ns
t
fi
20 ns
E
of
f
0.43 mJ
t
d(on)
19 ns
t
ri
14 ns
E
on
5.40 mJ
t
d(off)
226 ns
t
fi
82 ns
E
off
0.83 mJ
R
thJC
0.35 °C/W
R
thCS
TO-247 0.21 °C/W
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 1Ω
Diode Type = DH40-18A
Note 2
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 1Ω
Diode Type = DH40-18A
Note 2
© 2012 IXYS CORPORATION, All Rights Reserved
IXBT42N170A
IXBH42N170A
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0123456789101112
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
12
V
10
V
7
V
6
V
8
V
9
V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15
V
12
V
11
V
8
V
9
V
10
V
7
V
6
V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
012345678910111213
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
12
V
10
V
9V
7
V
5
V
6
V
8
V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15
V
I
C
= 84
A
I
C
= 42
A
I
C
= 21
A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
4
6
8
10
12
14
16
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 84
A
T
J
= 25ºC
42
A
21
A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
P1-P3P4-P6

IXBT42N170A

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IGBT 1700V 42A 357W TO268
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