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IXBT42N170A

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N170A
IXBH42N170A
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 11. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
80
90
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10Ω
dv / dt < 10V / ns
Fig. 12. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 42A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MH
C
ies
C
oes
C
res
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
200
220
024681012
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
J
= 25ºC
© 2012 IXYS CORPORATION, All Rights Reserved
IXBT42N170A
IXBH42N170A
Fig. 18. Inductive Turn-off
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
100
150
200
250
300
350
400
450
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 850V
I
C
= 84
A
I
C
= 42
A
Fig. 15. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
12345678910
R
G
- Ohms
E
off
- MilliJoules
4
8
12
16
20
24
28
32
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 850V
I
C
= 42
A
I
C
= 84
A
Fig. 16. Inductive Switching Energy Loss vs.
Collector Current
0
1
2
3
4
5
20 30 40 50 60 70 80
I
C
- Amperes
Eoff - MilliJoules
0
5
10
15
20
25
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC
T
J
= 125ºC
Fig. 17. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
6
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Eoff - MilliJoules
4
8
12
16
20
24
28
Eon - MilliJoules
I
C
= 84
A
I
C
= 42
A
E
off
E
on
- - - -
R
G
= 1Ω , V
GE
= 15V
V
CE
= 850V
Fig. 13. Forward-Bias Safe Operating Area @ T
C
= 25ºC
0.01
0.1
1
10
100
1000
1 10 100 1,000 10,000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
10ms
V
CE(sat)
Limit
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
DC
25µs
Fig. 14. Forward-Bias Safe Operating Area @ T
C
= 75ºC
0.01
0.1
1
10
100
1000
1 10 100 1,000 10,000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
10ms
V
CE(sat)
Limit
T
J
= 150ºC
T
C
= 75ºC
Single Pulse
DC
25µs
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBT42N170A
IXBH42N170A
IXYS REF: B_42N170A(7N)11-12-12
Fig. 22. Inductive Turn-on Switching Times
vs. Collector Current
0
20
40
60
80
100
120
20 30 40 50 60 70 80
I
C
- Amperes
t
r i
- Nanoseconds
16
18
20
22
24
26
28
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC
T
J
= 125ºC
Fig. 23. Inductive Turn-on
Switching Times vs. Junction Temperature
0
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
18
19
20
21
22
23
24
25
26
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 42
A
I
C
= 84
A
Fig. 21. Inductive Turn-on Switching Times
vs. Gate Resistance
0
20
40
60
80
100
120
140
160
12345678910
R
G
- Ohms
t
r i
- Nanoseconds
14
18
22
26
30
34
38
42
46
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 42
A
I
C
= 84
A
Fig. 19. Inductive Turn-off
Switching Times vs. Collector Current
0
20
40
60
80
100
120
140
20 30 40 50 60 70 80
I
C
- Amperes
t
f i
- Nanoseconds
120
140
160
180
200
220
240
260
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC
T
J
= 25ºC
Fig. 20. Inductive Turn-off
Switching Times vs. Junction Temperature
20
40
60
80
100
120
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 42A, 84
A
P1-P3P4-P6

IXBT42N170A

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Buy IXBT42N170A
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Description:
IGBT 1700V 42A 357W TO268
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