IXFM15N60 Datasheet IXFM15N60 | P1-P3

1 - 4

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 600 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MW 600 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C 15N60 15 A

20N60 20 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

15N60 60 A

20N60 80 A

I

AR

T

C

= 25°C 15N60 15 A

20N60 20 A

E

AR

T

C

= 25°C30mJ

dv/dt I

S

£ I

DM

, di/dt £ 100 A/ms, V

DD

£ V

DSS

, 5 V/ns

T

J

£ 150°C, R

G

= 2 W

P

D

T

C

= 25°C 300 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight TO-204 = 18 g, TO-247 = 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 250 mA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 2.0 4.5 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= 0.8 • V

DSS

T

J

=25°C 250 mA

V

GS

= 0 V T

J

= 125°C1mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 • I

D25

15N60 0.50 W

20N60 0.35 W

Pulse test, t £ 300 ms, duty cycle d £ 2 %

HiPerFET

TM

Power MOSFETs

N-Channel Enhancement Mode

High dv/dt, Low t

rr

, HDMOS

TM

Family

TO-247 AD (IXFH)

TO-204 AE (IXFM)

G = Gate, D = Drain,

S = Source, TAB = Drain

Features

• International standard packages

• Low R

DS (on)

HDMOS

TM

process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

• Space savings

• High power density

D

G

V

DSS

I

D25

R

DS(on)

IXFH/IXFM 15 N60 600 V 15 A 0.50 W

IXFH/IXFM 20 N60 600 V 20 A 0.35 W

t

rr

£ 250 ns

91526E (4/99)

(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

V

DS

= 10 V; I

D

= 0.5 • I

D25

, pulse test 11 18 S

C

iss

4500 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 420 pF

C

rss

140 pF

t

d(on)

20 40 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

43 60 ns

t

d(off)

R

G

= 2 W (External) 70 90 ns

t

f

40 60 ns

Q

g(on)

151 170 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

29 40 nC

Q

gd

60 85 nC

R

thJC

0.42 K/W

R

thCK

0.25 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V 15N60 15 A

20N60 20 A

I

SM

Repetitive; 15N60 60 A

pulse width limited by T

JM

20N60 80 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

T

J

=25°C 250 ns

T

J

= 125°C 400 ns

Q

RM

T

J

=25°C1mC

T

J

= 125°C2mC

I

RM

T

J

=25°C10A

T

J

= 125°C15A

I

F

= I

S

-di/dt = 100 A/ms,

V

R

= 100 V

IXFH 15N60 IXFH 20N60

IXFM 15N60 IXFM 20N60

TO-247 AD (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800

B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640

D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216

F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084

H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055

K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209

M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-204 AE (IXFM) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 38.61 39.12 1.520 1.540

B - 22.22 - 0.875

C 6.40 11.40 0.252 0.449

D 1.45 1.60 0.057 0.063

E 1.52 3.43 0.060 0.135

F 30.15 BSC 1.187 BSC

G 10.67 11.17 0.420 0.440

H 5.21 5.71 0.205 0.225

J 16.64 17.14 0.655 0.675

K 11.18 12.19 0.440 0.480

Q 3.84 4.19 0.151 0.165

R 25.16 26.66 0.991 1.050

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

3 - 4

IXFH 15N60 IXFH 20N60

IXFM 15N60 IXFM 20N60

Fig. 1 Output Characteristics Fig. 2 Input Admittance

Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of

Case Temperature Breakdown and Threshold Voltage

Fig. 3 R

DS(on)

vs. Drain Current Fig. 4 Temperature Dependence

of Drain to Source Resistance

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

BV/V

G(th)

- Normalized

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

T

C

- Degrees C

-50 -25 0 25 50 75 100 125 150

I

D

- Amperes

0

5

10

15

20

25

30

35

15N60

T

J

- Degrees C

-50 -25 0 25 50 75 100 125 150

R

DS(on)

- Normalized

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

I

D

- Amperes

0 5 10 15 20 25 30 35 40

R

DS(on)

- Normalized

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

V

GS

= 10V

V

GS

- Volts

012345678910

I

D

- Amperes

0

10

20

30

40

V

DS

- Volts

0 5 10 15 20

I

D

- Amperes

0

10

20

30

40

V

GS(th)

20N60

I

D

= 10A

V

GS

= 15V

V

GS

= 10V

BV

DSS

6V

5V

T

J

= 25°C

T

J

= 25°C

T

J

= 25°C

IXFM15N60

IXFM15N60

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