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IXFM15N60

P1-P3P4-P4
4 - 4
© 2000 IXYS All rights reserved
IXFH 15N60 IXFH 20N60
IXFM 15N60 IXFM 20N60
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
Fig.10 Transient Thermal Impedance
V
DS
- Volts
110100
I
D
- Amperes
0.1
1
10
100
Gate Charge - nCoulombs
0 20 40 60 80 100 120 140
V
GE
- Volts
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volts
0.00 0.25 0.50 0.75 1.00 1.25 1.50
I
D
- Amperes
0
10
20
30
40
50
60
70
80
V
CE
- Volts
0 5 10 15 20 25
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
1
600
D=0.5
C
rss
C
oss
C
iss
V
DS
= 300V
I
D
= 20A
I
G
= 10mA
10µs
100µs
1ms
10ms
100ms
Limited by R
DS(on)
Single Pulse
f = 1 MHz
V
DS
= 25V
T
J
= 125°C
T
J
= 25°C
D=0.2
D=0.01
D=0.02
D=0.05
D=0.1
P1-P3P4-P4

IXFM15N60

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Description:
POWER MOSFET TO-3
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New from this manufacturer.
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