July 2007 Rev 9 1/14
14
STGY40NC60VD
N-channel 600V - 50A - Max247
Very fast PowerMESH™ IGBT
www.st.com
Features
High current capability
High frequency operation up to 50kHz
Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “V” identifies a family
optimized for very high frequency applications.
Applications
High frequency inverters, UPS
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Figure 1. Internal schematic diagram
Type
V
CES
V
CE(sat)
(max)@25°C
I
C
@100°C
STGY40NC60VD 600V < 2.5V 50A
1
2
3
Max247
Table 1. Device summary
Order code Marking Package Packaging
STGY40NC60VD GY40NC60VD Max247 Tube
Contents STGY40NC60VD
2/14
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STGY40NC60VD Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GS
= 0)
600 V
I
C
(1)
1. Calculated according to the iterative formula:
Collector current (continuous) at T
C
= 25°C 80 A
I
C
(1)
Collector current (continuous) at T
C
= 100°C 50 A
I
CL
(2)
2. Pulse width limited by max junction temperature
Turn-off SOA minimum current 200 A
I
F
Diode RMS forward current at T
C
= 25°C 30 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25°C
260 W
T
j
Operating junction temperature -55 to 150 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max IGBT 0.48 °C/W
Rthj-case Thermal resistance junction-case max diode 1.5 °C/W
Rthj-amb Thermal resistance junction-ambient max 50 °C/W
T
L
Maximum lead temperature for soldering purpose
(1.6mm from case, for 10 sec) typ.
300 °C
I
C
T
C
()
T
JMAX
T
C
R
THJ C
V
CESAT MAX()
T
C
I
C
,()×
------------------------------------------------------------------------------------------------------=

STGY40NC60VD

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N Ch 600V 50A Max247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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