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STGY40NC60VD
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
Electrical ch
aracteristic
s
STGY40NC60VD
4/14
2 Electrical
characteristics
(T
CASE
=25°C unless otherwise specified)
T
able 3.
Static
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
V
BR(CES)
Collector-emitter
breakdown vo
ltage
I
C
= 1mA, V
GE
= 0
600
V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15V
, I
C
= 40A
V
GE
= 15V
, I
C
=40A,Tc=125°C
1.9
1.7
2.5
V
V
V
GE(th)
Gate threshold vo
ltage
V
CE
= V
GE
, I
C
= 250µA
3.75
5.75
V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= Max rating,T
C
= 25°C
V
CE
= Max rating,T
C
= 125°C
10
1
µA
mA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ±20V
, V
CE
= 0
±100
nA
g
fs
Forw
ard transcon
ductance
V
CE
= 15V
,
I
C
=20A
20
S
T
able 4.
Dynamic
Symbol
P
arameter
T
es
t cond
itions
Min.
T
yp.
Max.
Unit
C
ies
C
oes
C
res
Input capacitance
Output capacitance
Re
verse tran
sf
er
capacitance
V
CE
= 25V
, f = 1M
Hz,
V
GE
= 0
4550
350
105
pF
pF
pF
Q
g
Q
ge
Q
gc
T
otal gate char
ge
Gate-emitter charge
Gate-collector charge
V
CE
= 390V
, I
C
= 40A,
V
GE
= 15V
,
Figure
17
214
30
96
nC
nC
nC
STGY40NC60VD
Electric
al characteris
tics
5/14
T
able 5.
Switchi
ng on/off (in
ductive load)
Symbol
P
arameter
T
est conditions
Min.
T
yp.
Max.
Unit
t
d(on)
t
r
(di/dt)
on
T
ur
n-on dela
y time
Current rise time
T
ur
n-on current slope
V
CC
= 390V
, I
C
= 40A
R
G
= 3.3
Ω
, V
GE
= 15V
,
Figure
18
,
Figure
16
43
17
2060
ns
ns
A/µs
t
d(on)
t
r
(di/dt)
on
T
ur
n-on dela
y time
Current rise time
T
ur
n-on current slope
V
CC
= 390V
, I
C
= 40A
R
G
= 3.3
Ω
, V
GE
= 15V
,
Tj = 125°C
Figure
18
,
Figure
16
42
19
1900
ns
ns
A/µs
t
r(V
off)
t
d(V
off)
t
f
Off v
oltage rise time
T
ur
n-off dela
y time
Current fall time
V
CC
= 390V
, I
C
= 40A
R
G
= 3.3
Ω
, V
GE
= 15V
,
Figure
18
,
Figure
16
25
140
45
ns
ns
ns
t
r(V
off)
t
d(V
off)
t
f
Off v
oltage rise time
T
ur
n-off dela
y time
Current fall time
V
CC
= 390V
, I
C
= 40A
R
G
= 3.3
Ω
, V
GE
= 15V
,
Tj = 125°C
Figure
18
,
Figure
16
60
170
77
ns
ns
ns
T
able 6.
Switching ener
gy
(inductive load)
Symbol
P
arameter
T
est conditio
ns
Min.
T
yp.
Ma
x.
Unit
E
on
E
off
(1)
E
ts
1.
Turn-off losses include also the tail of the collector current
T
ur
n-on s
witching losses
T
ur
n-off s
witching losses
T
otal switching losses
V
CC
= 390V
, I
C
= 40A
R
G
= 3.3
Ω
, V
GE
= 15V
,
Figure
16
330
720
1050
450
970
1420
µJ
µJ
µJ
E
on
E
off
(1)
E
ts
T
ur
n-on s
witching losses
T
ur
n-off s
witching losses
T
otal switching losses
V
CC
= 390V
, I
C
= 40A
R
G
= 3.3
Ω
, V
GE
= 15V
,
Tj = 125°C
Figure
16
640
1400
2040
µJ
µJ
µJ
Electrical ch
aracteristic
s
STGY40NC60VD
6/14
T
able 7.
Collector
-emitter diode
Symbol
P
arameter
T
e
st cond
itions
Min.
T
yp.
Max.
Unit
V
f
F
orward on-v
oltage
I
f
= 20A
I
f
= 20A, Tj = 125
°C
1.5
1
2.2
V
V
t
rr
Q
rr
I
rrm
Re
verse reco
very
time
Re
verse reco
ver
y charge
Re
ve
rse recov
er
y current
I
f
= 20A,V
R
= 40V
,
Tj = 25°C
, di/dt = 100 A/
µ
s
Figure
19
44
66
3
ns
nC
A
t
rr
Q
rr
I
rrm
Re
verse reco
very
time
Re
verse reco
ver
y charge
Re
ve
rse recov
er
y current
I
f
= 40A,V
R
= 50V
,
Tj =125°C, di/dt = 100A/
µ
s
Figure
19
88
237
5.4
ns
nC
A
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
STGY40NC60VD
Mfr. #:
Buy STGY40NC60VD
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors N Ch 600V 50A Max247
Lifecycle:
New from this manufacturer.
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STGY40NC60VD