SI2307BDS-T1-E3 Datasheet SI2307BDS-T1-E3, SI2307BDS-T1-GE3 | P1-P3

Vishay Siliconix

Si2307BDS

Document Number: 72699

S-80427-Rev. C, 03-Mar-08

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free Option Available

• TrenchFET

®

Power MOSFET

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)

I

D

(A)

b

- 30

0.078 at V

GS

= - 10 V

- 3.2

0.130 at V

GS

= - 4.5 V

- 2.5

Ordering Information: Si2307BDS-T1-E3 (Lead (Pb)-free)

Si2307BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

* Marking Code

Si2307BDS (L7)*

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 board, t ≤ 5 s.

c. Surface Mounted on FR4 board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

- 30

V

Gate-Source Voltage

V

GS

± 20

Continuous Drain Current (T

J

= 150 °C)

b

T

A

= 25 °C

I

D

- 3.2 - 2.5

A

T

A

= 70 °C

- 2.6 - 2.0

Pulsed Drain Current

a

I

DM

- 12

Continuous Source Current (Diode Conduction)

b

I

S

- 1.25 - 0.75

Power Dissipation

b

T

A

= 25 °C

P

D

1.25 0.75

W

T

A

= 70 °C

0.8 0.48

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b

R

thJA

80 100

°C/W

Maximum Junction-to-Ambient

c

130 166

RoHS

COMPLIANT

www.vishay.com

2

Document Number: 72699

S-80427-Rev. C, 03-Mar-08

Vishay Siliconix

Si2307BDS

Notes:

a. Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. For DESIGN AID ONLY, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Limits

Unit Min. Typ. Max.

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 10 µA

- 30

V

Gate-Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 1.0 - 3.0

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 30 V, V

GS

= 0 V

- 1

µA

V

DS

= - 30 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≤ - 10 V, V

GS

= - 10 V

- 6 A

Drain-Source On-Resistance

a

R

DS(on)

V

GS

= - 10 V, I

D

= - 3.2 A

0.063 0.078

Ω

V

GS

= - 4.5 V, I

D

= - 2.5 A

0.105 0.130

Forward Transconductance

a

g

fs

V

DS

= - 10 V, I

D

= - 3.2 A

5.0 S

Diode Forward Voltage

V

SD

I

S

= - 0.75 A, V

GS

= 0 V

- 0.85 - 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 15 V, V

GS

= - 10 V

I

D

≅ - 1.7 A

9.0 15

nCGate-Source Charge

Q

gs

1.4

Gate-Drain Charge

Q

gd

2.4

Gate Resistance

R

g

f = 1.0 MHz 8.0 Ω

Input Capacitance

C

iss

V

DS

= - 15 V, V

GS

= 0 V, f = 1 MHz

380

pFOutput Capacitance

C

oss

100

Reverse Transfer Capacitance

C

rss

75

Switching

c

Tur n - O n T i m e

t

d(on)

V

DD

= - 15 V, R

L

= 15 Ω

I

D

≅ - 1.0 A, V

GEN

= - 4.5 V

R

g

= 6 Ω

920

ns

t

r

12 20

Turn-Off Time

t

d(off)

25 40

t

f

14 21

Document Number: 72699

S-80427-Rev. C, 03-Mar-08

www.vishay.com

3

Vishay Siliconix

Si2307BDS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

2

4

6

8

10

12

0246810

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

V

GS

= 10 thru 5 V

2 V

4 V

3 V

- On-Resistance (Ω)R

DS(on)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0246810

I

D

- Drain Current (A)

V

GS

= 10 V

V

GS

= 4.5 V

0

2

4

6

8

10

0246810

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

V

DS

= 15 V

I

D

= 3 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

12

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

T

C

= 125 °C

- 55 °C

25 °C

0

100

200

300

400

500

600

700

0 5 10 15 20 25 30

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

C

oss

C

iss

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 3.2 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

SI2307BDS-T1-E3

SI2307BDS-T1-E3

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