Clock operations M48T35AV
16/29 Doc ID 6845 Rev 9
Figure 9. Crystal accuracy across temperature
Figure 10. Clock calibration
AI02124
-80
-60
-100
-40
-20
0
20
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
ΔF
= -0.038 (T - T
0
)
2
± 10%
F
ppm
C
2
T
0
= 25 °C
ppm
°C
AI00594B
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
M48T35AV Clock operations
Doc ID 6845 Rev 9 17/29
3.6 V
CC
noise and negative going transients
I
CC
transients, including those produced by output switching, can produce voltage
fluctuations, resulting in spikes on the V
CC
bus. These transients can be reduced if
capacitors are used to store energy which stabilizes the V
CC
bus. The energy stored in the
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1 µF (as shown in
Figure 11) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
CC
that drive it to values below V
SS
by as much as
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
CC
to V
SS
(cathode connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 11. Supply voltage protection
AI02169
V
CC
0.1µF DEVICE
V
CC
V
SS
Maximum ratings M48T35AV
18/29 Doc ID 6845 Rev 9
4 Maximum ratings
Stressing the device above the rating listed in the absolute maximum ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 6. Absolute maximum ratings
Caution: Negative undershoots below –0.3 V are not allowed on any pin while in the battery backup
mode.
Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT
®
sockets.
Symbol Parameter Value Unit
T
A
Ambient operating temperature 0 to 70 °C
T
STG
Storage temperature (V
CC
off, oscillator off) –40 to 85 °C
T
SLD
(1)(2)(3)
1. For DIP package, soldering temperature of the IC leads is to not exceed 260 °C for 10 seconds.
Furthermore, the devices shall not be exposed to IR reflow nor preheat cycles (as performed as part of
wave soldering). ST recommends the devices be hand-soldered or placed in sockets to avoid heat
damage to the batteries.
2. For DIP packaged devices, ultrasonic vibrations should not be used for post-solder cleaning to avoid
damaging the crystal.
3. For SOH28 package, lead-free (Pb-free) lead finish: reflow at peak temperature of 260 °C (the time above
255 °C must not exceed 30 seconds).
Lead solder temperature for 10 seconds 260 °C
V
IO
Input or output voltages –0.3 to 4.6 V
V
CC
Supply voltage –0.3 to 4.6 V
I
O
Output current 20 mA
P
D
Power dissipation 1 W

M48T35AV-10MH1F

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
NVRAM 256K (32Kx8) 100ns
Lifecycle:
New from this manufacturer.
Delivery:
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