M48T35AV DC and AC parameters
Doc ID 6845 Rev 9 19/29
5 DC and AC parameters
This section summarizes the operating and measurement conditions, as well as the DC and
AC characteristics of the device. The parameters in the following DC and AC characteristic
tables are derived from tests performed under the measurement conditions listed in the
relevant tables. Designers should check that the operating conditions in their projects match
the measurement conditions when using the quoted parameters.
Table 7. Operating and AC measurement conditions
Note: Output Hi-Z is defined as the point where data is no longer driven.
Figure 12. AC measurement load circuit
Table 8. Capacitance
Parameter M48T35AV Unit
Supply voltage (V
CC
) 3.0 to 3.6 V
Ambient operating temperature (T
A
) 0 to 70 °C
Load capacitance (C
L
)50pF
Input rise and fall times 5ns
Input pulse voltages 0 to 3 V
Input and output timing ref. voltages 1.5 V
Symbol Parameter
(1)(2)
1. Effective capacitance measured with power supply at 5 V; sampled only, not 100% tested.
2. At 25 °C, f = 1 MHz.
Min Max Unit
C
IN
Input capacitance - 10 pF
C
OUT
(3)
3. Outputs deselected.
Output capacitance - 10 pF
AI02586
C
L
= 50pF
(or 5pF)
C
L
includes JIG capacitance
DEVICE
UNDER
TEST
1.75V
DC and AC parameters M48T35AV
20/29 Doc ID 6845 Rev 9
Table 9. DC characteristics
Figure 13. Power down/up mode AC waveforms
Symbol Parameter Test condition
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70 °C; V
CC
= 3.0 to 3.6 V (except where noted).
M48T35AV
Unit
Min Max
I
LI
Input leakage current 0 V V
IN
V
CC
±1 µA
I
LO
(2)
2. Outputs deselected.
Output leakage current 0 V V
OUT
V
CC
±1 µA
I
CC
Supply current Outputs open 30 mA
I
CC1
Supply current (standby) TTL E = V
IH
2mA
I
CC2
Supply current (standby) CMOS E = V
CC
– 0.2 V 2 mA
V
IL
(3)
3. Negative spikes of –1 V allowed for up to 10 ns once per cycle.
Input low voltage 0.3 0.8 V
V
IH
Input high voltage 2.2 V
CC
+ 0.3 V
V
OL
Output low voltage I
OL
= 2.1 mA 0.4 V
V
OH
Output high voltage I
OH
= –1 mA 2.4 V
AI01168C
V
CC
INPUTS
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tPD
tRB
tDR
VALID VALID
(PER CONTROL INPUT)
RECOGNIZEDRECOGNIZED
V
PFD
(max)
V
PFD
(min)
V
SO
trec
M48T35AV DC and AC parameters
Doc ID 6845 Rev 9 21/29
Table 10. Power down/up AC characteristics
Table 11. Power down/up trip points DC characteristics
Symbol Parameter
(1)
1. Valid for ambient operating temperature: T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 4.5 to 5.5 V or 3.0 to 3.6 V (except where
noted).
Min Max Unit
t
PD
E or W at V
IH
before power down 0 µs
t
F
(2)
2. V
PFD
(max) to V
PFD
(min) fall time of less than t
F
may result in deselection/write protection not occurring until 200 µs after
V
CC
passes V
PFD
(min).
V
PFD
(max) to V
PFD
(min) V
CC
fall time 300 µs
t
FB
(3)
3. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
V
PFD
(min) to V
SS
V
CC
fall time
150 µs
t
R
V
PFD
(min) to V
PFD
(max) V
CC
rise time 10 µs
t
RB
V
SS
to V
PFD
(min) V
CC
rise time 1 µs
t
rec
V
PFD
(max) to inputs recognized 40 200 ms
Symbol Parameter
(1)(2)
1. Valid for ambient operating temperature: T
A
= 0 to 70 °C or –40 to 85 °C; V
CC
= 4.5 to 5.5 V or 3.0 to 3.6 V (except where
noted).
2. All voltages referenced to V
SS
.
Min Typ Max Unit
V
PFD
Power-fail deselect voltage 2.7 2.9 3.0 V
V
SO
Battery backup switchover voltage V
PFD
–100mV V
t
DR
(3)
3. At 25 °C, V
CC
= 0 V.
Expected data retention time 10
(4)
4. CAPHAT™ and M4T32-BR12SH1 SNAPHAT
®
only, M4T28-BR12SH1 SNAPHAT
®
top t
DR
= 7 years (typ).
Ye a r s

M48T35AV-10MH1F

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
NVRAM 256K (32Kx8) 100ns
Lifecycle:
New from this manufacturer.
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