HIP6013CBZ-T

7
Feedback Compensation
Figure 7 highlights the voltage-mode control loop for a
synchronous-rectified buck converter. The output voltage
(Vout) is regulated to the Reference voltage level. The error
amplifier (Error Amp) output (V
E/A
) is compared with the
oscillator (OSC) triangular wave to provide a pulse-width
modulated (PWM) wave with an amplitude of Vin at the
PHASE node. The PWM wave is smoothed by the output
filter (Lo and Co).
The modulator transfer function is the small-signal transfer
function of Vout/V
E/A
. This function is dominated by a DC
Gain and the output filter (Lo and Co), with a double pole
break frequency at F
LC
and a zero at F
ESR
. The DC Gain of
the modulator is simply the input voltage (Vin) divided by the
peak-to-peak oscillator voltage V
OSC
.
Modulator Break Frequency Equations
The compensation network consists of the error amplifier
(internal to the HIP6013) and the impedance networks Z
IN
and Z
FB
. The goal of the compensation network is to provide
a closed loop transfer function with the highest 0dB crossing
frequency (f
0dB
) and adequate phase margin. Phase margin
is the difference between the closed loop phase at f
0dB
and
180
o
The equations below relate the compensation
network’s poles, zeros and gain to the components (R1, R2,
R3, C1, C2, and C3) in Figure 8. Use these guidelines for
locating the poles and zeros of the compensation network:
Compensation Break Frequency Equations
1. Pick Gain (R2/R1) for desired converter bandwidth
2. Place 1
ST
Zero Below Filter’s Double Pole
(~75% F
LC
)
3. Place 2
ND
Zero at Filter’s Double Pole
4. Place 1
ST
Pole at the ESR Zero
5. Place 2
ND
Pole at Half the Switching Frequency
6. Check Gain against Error Amplifier’s Open-Loop Gain
7. Estimate Phase Margin - Repeat if Necessary
Figure 8 shows an asymptotic plot of the DC-DC converter’s
gain vs frequency. The actual Modulator Gain has a high
gain peak do to the high Q factor of the output filter and is
not shown in Figure 8. Using the above guidelines should
give a Compensation Gain similar to the curve plotted. The
open loop error amplifier gain bounds the compensation
gain. Check the compensation gain at F
P2
with the
capabilities of the error amplifier. The Closed Loop Gain is
constructed on the log-log graph of Figure 8 by adding the
Modulator Gain (in dB) to the Compensation Gain (in dB).
This is equivalent to multiplying the modulator transfer
function to the compensation transfer function and plotting
the gain.
The compensation gain uses external impedance networks
Z
FB
and Z
IN
to provide a stable, high bandwidth (BW) overall
loop. A stable control loop has a gain crossing with
-20dB/decade slope and a phase margin greater than 45
o
.
Include worst case component variations when determining
phase margin.
FIGURE 7. VOLTAGE - MODE BUCK CONVERTER
COMPENSATION DESIGN
V
OUT
OSC
REFERENCE
L
O
C
O
ESR
V
IN
V
OSC
ERROR
AMP
PWM
DRIVER
(PARASITIC)
-
REF
R1
R3
R2
C3
C2
C1
COMP
V
OUT
FB
Z
FB
HIP6013
Z
IN
COMPARATOR
DRIVER
DETAILED COMPENSATION COMPONENTS
PHASE
V
E/A
+
-
+
-
Z
IN
Z
FB
+
F
LC =
1
2 L
O
C
O
---------------------------------------
F
ESR
=
1
2 ESR C
O

--------------------------------------------
F
Z1
=
1
2R2 C1
--------------------------------- F
P1
=
1
2R2
C1 C2
C1 + C2
----------------------


------------------------------------------------------
F
Z2
=
1
2 R1 + R3 C3
----------------------------------------------------- F
P2
=
1
2R3 C3
---------------------------------
HIP6013
8
Component Selection Guidelines
Output Capacitor Selection
An output capacitor is required to filter the output and supply
the load transient current. The filtering requirements are a
function of the switching frequency and the ripple current.
The load transient requirements are a function of the slew
rate (di/dt) and the magnitude of the transient load current.
These requirements are generally met with a mix of
capacitors and careful layout.
Modern microprocessors produce transient load rates above
1A/ns. High frequency capacitors initially supply the transient
and slow the current load rate seen by the bulk capacitors.
The bulk filter capacitor values are generally determined by
the ESR (effective series resistance) and voltage rating
requirements rather than actual capacitance requirements.
High frequency decoupling capacitors should be placed as
close to the power pins of the load as physically possible. Be
careful not to add inductance in the circuit board wiring that
could cancel the usefulness of these low inductance
components. Consult with the manufacturer of the load on
specific decoupling requirements. For example, Intel
recommends that the high frequency decoupling for the
Pentium-Pro be composed of at least forty (40) 1.0F
ceramic capacitors in the 1206 surface-mount package.
Use only specialized low-ESR capacitors intended for
switching-regulator applications for the bulk capacitors. The
bulk capacitor’s ESR will determine the output ripple voltage
and the initial voltage drop after a high slew-rate transient.
An aluminum electrolytic capacitor's ESR value is related to
the case size with lower ESR available in larger case sizes.
However, the equivalent series inductance (ESL) of these
capacitors increases with case size and can reduce the
usefulness of the capacitor to high slew-rate transient
loading. Unfortunately, ESL is not a specified parameter.
Work with your capacitor supplier and measure the
capacitor’s impedance with frequency to select a suitable
component. In most cases, multiple electrolytic capacitors of
small case size perform better than a single large case
capacitor.
Output Inductor Selection
The output inductor is selected to meet the output voltage
ripple requirements and minimize the converter’s response
time to the load transient. The inductor value determines the
converter’s ripple current and the ripple voltage is a function
of the ripple current. The ripple voltage and current are
approximated by the following equations:
Increasing the value of inductance reduces the ripple current
and voltage. However, the large inductance values reduce
the converter’s response time to a load transient.
One of the parameters limiting the converter’s response to a
load transient is the time required to change the inductor
current. Given a sufficiently fast control loop design, the
HIP6013 will provide either 0% or 100% duty cycle in
response to a load transient. The response time is the time
required to slew the inductor current from an initial current
value to the transient current level. During this interval the
difference between the inductor current and the transient
current level must be supplied by the output capacitor.
Minimizing the response time can minimize the output
capacitance required.
The response time to a transient is different for the
application of load and the removal of load. The following
equations give the approximate response time interval for
application and removal of a transient load:
where: I
TRAN
is the transient load current step, t
RISE
is the
response time to the application of load, and t
FALL
is the
response time to the removal of load. With a +5V input
source, the worst case response time can be either at the
application or removal of load and dependent upon the
output voltage setting. Be sure to check both of these
equations at the minimum and maximum output levels for
the worst case response time.
Input Capacitor Selection
Use a mix of input bypass capacitors to control the voltage
overshoot across the MOSFETs. Use small ceramic
capacitors for high frequency decoupling and bulk capacitors
to supply the current needed each time Q1 turns on. Place
the small ceramic capacitors physically close to the
MOSFETs and between the drain of Q1 and the anode of
Schottky diode D2.
The important parameters for the bulk input capacitor are the
voltage rating and the RMS current rating. For reliable
100
80
60
40
20
0
-20
-40
-60
F
P1
F
Z2
10M1M100K10K1K10010
OPEN LOOP
ERROR AMP GAIN
F
Z1
F
P2
F
LC
F
ESR
COMPENSATION
GAIN (dB)
FREQUENCY (Hz)
GAIN
20LOG
(V
IN
/V
OSC
)
MODULATOR
GAIN
20LOG
(R2/R1)
CLOSED LOOP
GAIN
FIGURE 8. ASYMPTOTIC BODE PLOT OF CONVERTER GAIN
I =
V
IN
- V
OUT
Fs L
O
--------------------------------
V
OUT
V
IN
----------------
V
OUT
= I x ESR
t
RISE
=
L
O
x I
TRAN
V
IN
- V
O
t
FALL
=
L
O
x I
TRAN
V
O
HIP6013
9
operation, select the bulk capacitor with voltage and current
ratings above the maximum input voltage and largest RMS
current required by the circuit. The capacitor voltage rating
should be at least 1.25 times greater than the maximum
input voltage and a voltage rating of 1.5 times is a
conservative guideline. The RMS current rating requirement
for the input capacitor of a buck regulator is approximately
1/2 the DC load current.
For a through hole design, several electrolytic capacitors
(Panasonic HFQ series or Nichicon PL series or Sanyo MV-
GX or equivalent) may be needed. For surface mount
designs, solid tantalum capacitors can be used, but caution
must be exercised with regard to the capacitor surge current
rating. These capacitors must be capable of handling the
surge-current at power-up. The TPS series available from
AVX, and the 593D series from Sprague are both surge
current tested.
MOSFET Selection/Considerations
The HIP6013 requires an N-Channel power MOSFET. It
should be selected based upon r
DS(ON)
, gate supply
requirements, and thermal management requirements.
In high-current applications, the MOSFET power
dissipation, package selection and heatsink are the
dominant design factors. The power dissipation includes
two loss components; conduction loss and switching loss.
The conduction losses are the largest component of power
dissipation for the MOSFET. Switching losses also
contribute to the overall MOSFET power loss (see the
equations below). These equations assume linear voltage-
current transitions and are approximations. The gate-
charge losses are dissipated by the HIP6013 and don't
heat the MOSFET. However, large gate-charge increases
the switching interval, t
SW
, which increases the upper
MOSFET switching losses. Ensure that the MOSFET is
within its maximum junction temperature at high ambient
temperature by calculating the temperature rise according
to package thermal-resistance specifications. A separate
heatsink may be necessary depending upon MOSFET
power, package type, ambient temperature and air flow.
Standard-gate MOSFETs are normally recommended for
use with the HIP6013. However, logic-level gate MOSFETs
can be used under special circumstances. The input voltage,
upper gate drive level, and the MOSFET’s absolute gate-to-
source voltage rating determine whether logic-level
MOSFETs are appropriate.
Figure 9 shows the upper gate drive (BOOT pin) supplied by
a bootstrap circuit from V
CC
. The boot capacitor, C
BOOT
develops a floating supply voltage referenced to the PHASE
pin. This supply is refreshed each cycle to a voltage of V
CC
less the boot diode drop (V
D
) when the lower MOSFET, Q2
turns on. A logic-level MOSFET can only be used for Q1 if
the MOSFET’s absolute gate-to-source voltage rating
exceeds the maximum voltage applied to V
CC
.
Figure 10 shows the upper gate drive supplied by a direct
connection to VCC. This option should only be used in
converter systems where the main input voltage is +5VDC
or less. The peak upper gate-to-source voltage is
approximately V
CC
less the input supply. For +5V main
power and +12VDC for the bias, the gate-to-source voltage
of Q1 is 7V. A logic-level MOSFET is a good choice for Q1
and a logic-level MOSFET is a good choice for Q1 under
these conditions.
P
COND
= I
O
2
x r
DS(ON)
x D
P
SW
=
1
2
I
O
x V
IN
x t
SW
x Fs
Where: D is the duty cycle = V
O
/ V
IN
,
t
SW
is the switching interval, and
Fs is the switching frequency.
FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION
+12V
HIP6013
GND
UGATE
PHASE
BOOT
VCC
+5V OR +12V
C
BOOT
D
BOOT
Q1
D2
NOTE:
V
G-S
V
CC
- V
D
+
-
HIP6013

HIP6013CBZ-T

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Switching Controllers STD BUCK PWM/1 5%/14
Lifecycle:
New from this manufacturer.
Delivery:
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