IXYS reserves the right to change limits, test conditions, and dimensions.
IXTV250N075T
IXTV250N075TS
PLUS220SMD (IXTV_S) Outline
PLUS220 (IXTV) Outline
Terminals:
1 - Gate 2 - Drain
3 - Source Tab - Drain
Symbol Test Conditions Characteristic Values
(T
J
= 25° C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 60 A, Note 1 75 122 S
C
iss
9900 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1330 pF
C
rss
285 pF
t
d(on)
32 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 50 A 50 ns
t
d(off)
R
G
= 3.3 Ω (External) 58 ns
t
f
45 ns
Q
g(on)
200 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 50 nC
Q
gd
60 nC
R
thJC
0.27°C/W
R
thCS
PLUS220 .25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic
Values (T
J
= 25° C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0 V 250 A
I
SM
Pulse width limited by T
JM
560 A
V
SD
I
F
= 50 A, V
GS
= 0 V, Note 1 1.0 V
t
rr
I
F
= 50 A, -di/dt = 100 A/µs80ns
V
R
= 25 V, V
GS
= 0 V
Note 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location is 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
