© 2006 IXYS CORPORATION All rights reserved
IXTV250N075T
IXTV250N075TS
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
20
25
30
35
40
45
50
55
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanosecond
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 37.5V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
35
40
45
50
55
60
65
70
75
80
85
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 37.5V
I
D
= 50A, 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
40
41
42
43
44
45
46
47
48
49
50
51
52
53
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanosecond
50
54
58
62
66
70
74
78
82
86
90
94
98
102
t
d ( o f f )
- Nanosecond
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 37.5V
I
D
= 25A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
36
38
40
42
44
46
48
50
52
54
56
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
f
- Nanoseconds
50
55
60
65
70
75
80
85
90
95
100
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3
Ω
, V
GS
= 10V
V
DS
= 37.5V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
23
26
29
32
35
38
41
44
47
50
53
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanosecond
R
G
= 3.3
Ω
V
GS
= 10V
V
DS
= 37.5V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
20
40
60
80
100
120
140
160
180
200
220
240
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
f
- Nanoseconds
60
90
120
150
180
210
240
270
300
330
360
390
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 37.5V
I
D
= 50A
I
D
= 25A
IXYS REF: T_250N075T (6V) 8-31-08-A.xls
