IRF6201PbF
2
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
R
θ
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 4.6 ––– mV/°C
R
DS(on)
––– 1.90 2.45
––– 2.10 2.75
V
GS(th)
Gate Threshold Voltage 0.5 ––– 1.1 V
V
DS
= V
GS
, I
D
= 100µA
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Q
g
Total Gate Charge ––– 130 195
Q
gs
Gate-to-Source Charge ––– 16 –––
Q
gd
Gate-to-Drain Charge ––– 60 –––
t
d(on)
Turn-On Delay Time ––– 29 –––
t
r
Rise Time ––– 100 –––
t
d(off)
Turn-Off Delay Time ––– 320 –––
t
f
Fall Time ––– 265 –––
C
iss
Input Capacitance ––– 8555 –––
C
oss
Output Capacitance ––– 1735 –––
C
rss
Reverse Transfer Capacitance ––– 1290 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 82 120 ns
Q
rr
Reverse Recovery Charge ––– 180 270 nC
Thermal Resistance
Parameter Units
R
θJL
Junction-to-Drain Lead
R
θJA
Junction-to-Ambient
Typ.
–––
–––
°C/W
Max.
20
50
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
2.5
110
nA
nC
ns
pF
R
G
= 6.8
Ω
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
DD
= 20V, V
GS
= 4.5V
I
D
= 1.0A
V
DS
= 10V
V
GS
= 12V
V
GS
= -12V
V
GS
= 4.5V
m
Ω
µA
T
J
= 25°C, I
F
= 2.5A, V
DD
= 16V
di/dt = 100/µs
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
I
D
= 22A
V
DS
= 16V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 27A
V
GS
= 2.5V, I
D
= 22A
Conditions
See Figs. 10a & 10b
ƒ = 1.0MHz
V
GS
= 0V
V
DS
= 16V
