NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
Table 1 Scattering parameters: V
DS
=5 V; V
G2-S
= 4 V; I
D
=10mA
Table 2 Noise data: V
DS
= 5 V; V
G2-S
= 4 V; I
D
=10mA
f
(MHz)
S
11
S
21
S
12
S
22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
40 0.989 −3.4 2.420 175.7 0.000 79.9 0.993 −1.6
100 0.985 −8.3 2.414 169.1 0.001 78.3 0.992 −3.9
200 0.976 −16.4 2.368 158.8 0.003 80.3 0.987 −7.8
300 0.958 −24.1 2.301 148.5 0.004 73.7 0.980 −11.4
400 0.942 −32.0 2.251 138.8 0.005 70.7 0.974 −15.2
500 0.918 −39.3 2.170 129.5 0.005 67.2 0.966 −18.7
600 0.899 −46.0 2.080 120.7 0.005 67.8 0.958 −22.2
700 0.876 −52.6 2.001 112.1 0.005 68.6 0.951 −25.5
800 0.852 −58.8 1.924 103.2 0.005 72.9 0.944 −28.9
900 0.823 −64.9 1.829 94.7 0.005 78.7 0.937 −32.1
1000 0.800 −70.9 1.747 86.5 0.005 88.3 0.933 −35.2
1200 0.750 −82.4 1.621 70.7 0.005 120.5 0.928 −41.7
1400 0.719 −92.7 1.535 54.6 0.008 139.8 0.930 −48.4
1600 0.682 −102.5 1.424 39.4 0.010 137.8 0.924 −54.9
1800 0.642 −109.8 1.349 22.5 0.013 156.8 0.928 −62.9
2000 0.602 −116.5 1.283 1.1 0.018 175.1 0.928 −73.1
2200 0.547 −124.9 1.130 −15.1 0.014 172.6 0.887 −81.0
2400 0.596 −128.7 1.018 −49.1 0.040 −163.9 0.837 −95.8
2600 0.682 −132.6 0.979 −79.4 0.077 −164.0 0.778 −109.6
2800 0.771 −142.5 0.804 −116.2 0.120 178.8 0.629 −119.5
3000 0.793 −157.5 0.541 −153.5 0.149 158.3 0.479 −119.9
f
(MHz)
F
min
(dB)
Γ
opt
r
n
(ratio) (deg)
800 2.00 0.686 49.6 50.40
Rev. 06 - 13 November 2007
