OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BF904R,235

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. T
s
is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
T
j
=25°C unless otherwise specified.
Note
1. R
G1
connects gate 1 to V
GG
= 5 V; see Fig.20.
DYNAMIC CHARACTERISTICS
Common source; T
amb
=25°C; V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 10 mA; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1
BF904 500 K/W
BF904R 550 K/W
R
th j-s
thermal resistance from junction to soldering point note 2
BF904 T
s
=92°C 290 K/W
BF904R T
s
=78°C 360 K/W
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)G1-SS
gate 1-source breakdown voltage V
G2-S
=V
DS
= 0; I
G1-S
= 10 mA 6 15 V
V
(BR)G2-SS
gate 2-source breakdown voltage V
G1-S
=V
DS
= 0; I
G2-S
= 10 mA 6 15 V
V
(F)S-G1
forward source-gate 1 voltage V
G2-S
=V
DS
= 0; I
S-G1
= 10 mA 0.5 1.5 V
V
(F)S-G2
forward source-gate 2 voltage V
G1-S
=V
DS
= 0; I
S-G2
= 10 mA 0.5 1.5 V
V
G1-S(th)
gate 1-source threshold voltage V
G2-S
=4V; V
DS
=5V; I
D
=20µA 0.3 1 V
V
G2-S(th)
gate 2-source threshold voltage V
G1-S
=V
DS
=5V; I
D
=20µA 0.3 1.2 V
I
DSX
drain-source current V
G2-S
=4V; V
DS
=5V;
R
G1
= 120 kΩ; note 1
813mA
I
G1-SS
gate 1 cut-off current V
G2-S
=V
DS
= 0; V
G1-S
=5V − 50 nA
I
G2-SS
gate 2 cut-off current V
G1-S
=V
DS
= 0; V
G2-S
=5V − 50 nA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
y
fs
forward transfer admittance pulsed; T
j
=25°C 222530mS
C
ig1-s
input capacitance at gate 1 f = 1 MHz − 2.2 2.6 pF
C
ig2-s
input capacitance at gate 2 f = 1 MHz 1 1.5 2 pF
C
os
drain-source capacitance f = 1 MHz 1 1.3 1.6 pF
C
rs
reverse transfer capacitance f = 1 MHz − 25 35 fF
F noise figure f = 200 MHz; G
S
= 2 mS; B
S
=B
Sopt
− 1 1.5 dB
f = 800 MHz; G
S
=G
Sopt
; B
S
=B
Sopt
− 2 2.8 dB
Rev. 06 - 13 November 2007
4 of 14
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
Fig.4 Transfer admittance as a function of the
junction temperature; typical values.
50 0 50 150
30
0
MLD268
100
T ( C)
o
j
Y
fs
(mS)
40
20
10
Fig.5 Typical gain reduction as a function of
the AGC voltage.
f = 50 MHz.
handbook, halfpage
0
10
20
30
40
50
01234
V (V)
AGC
gain
reduction
(dB)
MRA769
Fig.6 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.20.
V
DS
= 5 V; V
GG
= 5 V; f
w
= 50 MHz.
f
unw
= 60 MHz; T
amb
=25°C; R
G1
= 120 kΩ.
handbook, halfpage
80
90
100
110
120
0 1020304050
V
unw
(dB V)
gain reduction (dB)
MRA771
µ
Fig.7 Transfer characteristics; typical values.
V
DS
=5V.
T
j
=25°C.
0
20
10
15
5
0
0.4 2.0
MLD270
0.8 1.2 1.6
I
D
(mA)
V (V)
G1 S
2 V
1.5 V
1 V
V = 4 V
3 V 2.5 V
G2 S
Rev. 06 - 13 November 2007
5 of 14
NXP Semiconductors Product specification
N-channel dual gate MOS-FETs BF904; BF904R
Fig.8 Output characteristics; typical values.
V
G2-S
=4V.
T
j
=25°C.
handbook, halfpage
0
20
8
12
16
4
0
210
MLD269
468
I
D
(mA)
V (V)
DS
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
V = 1.4 V
G1 S
Fig.9 Gate 1 current as a function of gate 1
voltage; typical values.
V
DS
=5V.
T
j
=25°C.
handbook, halfpage
0
150
100
50
0
0.5 2.5
MLD271
1.0 1.5 2.0
I
G1
(µA)
V (V)
G1 S
3.5 V
2.5 V
2 V
3 V
V = 4 V
G2 S
Fig.10 Forward transfer admittance as a
function of drain current; typical values.
V
DS
=5V.
T
j
=25°C.
handbook, halfpage
0
40
30
20
10
0
4 8 12 16 20
MLD272
y
fs
(mS)
I (mA)
D
3 V
2.5 V
2 V
V = 4 V
G2 S
3.5 V
Fig.11 Drain current as a function of gate 1 current;
typical values.
V
DS
=5V.
V
G2-S
=4V.
T
j
=25°C.
handbook, halfpage
0
16
8
12
4
0
10 50
MLD273
20 30 40
I
D
(mA)
I (µA)
G1
Rev. 06 - 13 November 2007
6 of 14
P1-P3P4-P6P7-P9P10-P12P13-P14

BF904R,235

Mfr. #:
Buy BF904R,235
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Dual N-Channel 7V 30mA 200mW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet