SIZ914DT-T1-GE3 Datasheet SIZ914DT-T1-GE3 | P1-P3

Vishay Siliconix

SiZ914DT

Document Number: 62905

S13-2181-Rev. A, 14-Oct-13

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Dual N-Channel 30 V (D-S) MOSFETs

FEATURES

• TrenchFET

®

Gen IV Power MOSFETs

• 100 % R

g

and UIS Tested

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• CPU Core Power

• Computer/Server Peripherals

• Synchronous Buck Converter

• POL

• Telecom DC/DC

Notes:

a. Package limited

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required

to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.

g. T

C

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() (Max.)

I

D

(A)

g

Q

g

(Typ.)

Channel-1 30

0.00640 at V

GS

= 10 V

16

a

7.2 nC

0.01000 at V

GS

= 4.5 V

16

a

Channel-2 30

0.00137 at V

GS

= 10 V

40

a

30.1 nC

0.00194 at V

GS

= 4.5 V

40

a

Ordering Information:

SiZ914DT-T1-GE3 (Lead (Pb)-free and Halogen-free)

S

2

G

2

G

1

D

1

D

1

6

7

8

3

2

1

D

1

S

1

/D

2

5 mm

6 mm

D

1

4

5

Pin 1

PowerPAIR

®

6 x 5

Pin 9

D

1

S

2

N-Channel 2

MOSFET

G

1

S

1

/D

2

G

2

Schottky

Diode

N-Channel 1

MOSFET

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Channel-1 Channel-2 Unit

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

+ 20, - 16

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

16

a

40

a

A

T

C

= 70 °C

16

a

40

a

T

A

= 25 °C

16

a, b, c

40

a, b, c

T

A

= 70 °C

15.5

b, c

38.8

b, c

Pulsed Drain Current (t = 100 µs)

I

DM

80 100

Continuous Source Drain Diode Current

T

C

= 25 °C

I

S

19 28

T

A

= 25 °C

3.25

b, c

4.3

b, c

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

10 20

Single Pulse Avalanche Energy

E

AS

520

mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

22.7 100

W

T

C

= 70 °C

14.5 64

T

A

= 25 °C

3.9

b, c

5.2

b, c

T

A

= 70 °C

2.5

b, c

3.3

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol

Channel-1 Channel-2

Unit

Typ. Max. Typ. Max.

Maximum Junction-to-Ambient

b, f

t  10 s

R

thJA

25 32 19 24

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

4.4 5.5 1 1.25

www.vishay.com

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Document Number: 62905

S13-2181-Rev. A, 14-Oct-13

Vishay Siliconix

SiZ914DT

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width  300 µs, duty cycle  2 %.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= 250 µA

Ch-1 30

V

GS

= 0 V, I

D

= 250 µA

Ch-2 30

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

Ch-1 1.2 2.4

V

DS

= V

GS

, I

D

= 250 µA

Ch-2 1 2.4

Gate Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V, - 16 V

Ch-1 ± 100

nA

Ch-2 ± 100

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 30 V, V

GS

= 0 V

Ch-1 1

µA

V

DS

= 30 V, V

GS

= 0 V

Ch-2 60 240

V

DS

= 30 V, V

GS

= 0 V, T

J

= 55 °C

Ch-1 5

V

DS

= 30 V, V

GS

= 0 V, T

J

= 55 °C

Ch-2 0.5 5

mA

On-State Drain Current

b

I

D(on)

V

DS

5 V, V

GS

= 10 V

Ch-1 20

A

V

DS

5 V, V

GS

= 10 V

Ch-2 25

Drain-Source On-State Resistance

b

R

DS(on)

V

GS

= 10 V, I

D

= 19 A

Ch-1 0.00530 0.00640



V

GS

= 10 V, I

D

= 20 A

Ch-2 0.00114 0.00137

V

GS

= 4.5 V, I

D

= 15 A

Ch-1 0.00800 0.01000

V

GS

= 4.5 V, I

D

= 20 A

Ch-2 0.00155 0.00194

Forward Transconductance

b

g

fs

V

DS

= 10 V, I

D

= 19 A

Ch-1 55

S

V

DS

= 10 V, I

D

= 20 A

Ch-2 68

Dynamic

a

Input Capacitance

C

iss

Channel-1

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

Channel-2

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

Ch-1 1208

pF

Ch-2 5603

Output Capacitance

C

oss

Ch-1 375

Ch-2 2202

Reverse Transfer Capacitance

C

rss

Ch-1 30

Ch-2 168

C

rss

/C

iss

Ratio

Ch-1 0.025 0.050

Ch-2 0.032 0.064

Total Gate Charge

Q

g

V

DS

= 15 V, V

GS

= 10 V, I

D

= 20 A

Ch-1 17 26

nC

V

DS

= 15 V, V

GS

= 10 V, I

D

= 20 A

Ch-2 66 99

Channel-1

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 20 A

Channel-2

V

DS

= 15 V, V

GS

= 4.5 V, I

D

= 20 A

Ch-1 7.2 11

Ch-2 30.1 45.2

Gate-Source Charge

Q

gs

Ch-1 3.6

Ch-2 10.9

Gate-Drain Charge

Q

gd

Ch-1 0.94

Ch-2 3.8

Output Charge

Q

oss

V

DS

= 15 V, V

GS

= 0 V

Ch-1 10

Ch-2 60

Gate Resistance

R

g

f = 1 MHz

Ch-1 0.5 2.5 5



Ch-2 0.2 1 2

Document Number: 62905

S13-2181-Rev. A, 14-Oct-13

www.vishay.com

3

Vishay Siliconix

SiZ914DT

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width  300 µs, duty cycle  2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Dynamic

a

Tu r n - On D e l ay T i m e

t

d(on)

Channel-1

V

DD

= 15 V, R

L

= 1.5 

I

D

 10 A, V

GEN

= 4.5 V, R

g

= 1 

Channel-2

V

DD

= 15 V, R

L

= 1.5 

I

D

 10 A, V

GEN

= 4.5 V, R

g

= 1 

Ch-1 16 24

ns

Ch-2 40 60

Rise Time

t

r

Ch-1 11 20

Ch-2 127 190

Turn-Off Delay Time

t

d(off)

Ch-1 15 23

Ch-2 40 60

Fall Time

t

f

Ch-1 5 10

Ch-2 19 29

Tu r n - On D e l a y T i m e

t

d(on)

Channel-1

V

DD

= 15 V, R

L

= 1.5 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

Channel-2

V

DD

= 15 V, R

L

= 1.5 

I

D

 10 A, V

GEN

= 10 V, R

g

= 1 

Ch-1 10 20

Ch-2 12 20

Rise Time

t

r

Ch-1 10 20

Ch-2 30 45

Turn-Off Delay Time

t

d(off)

Ch-1 20 30

Ch-2 35 53

Fall Time

t

f

Ch-1 5 10

Ch-2 7 14

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

Ch-1 40

A

Ch-2 40

Pulse Diode Forward Current (t = 100 µs)

I

SM

Ch-1 80

Ch-2 100

Body Diode Voltage

V

SD

I

S

= 10 A, V

GS

= 0 V

Ch-1 0.8 1.2

V

I

S

= 2 A, V

GS

= 0 V

Ch-2 0.33 0.42

Body Diode Reverse Recovery Time

t

rr

Channel-1

I

F

= 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

Channel-2

I

F

= 10 A, dI/dt = 100 A/µs, T

J

= 25 °C

Ch-1 15 23

ns

Ch-2 62 93

Body Diode Reverse Recovery Charge

Q

rr

Ch-1 4 8

nC

Ch-2 96 144

Reverse Recovery Fall Time

t

a

Ch-1 9

ns

Ch-2 30.5

Reverse Recovery Rise Time

t

b

Ch-1 6

Ch-2 31.5

SIZ914DT-T1-GE3

SIZ914DT-T1-GE3

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