Document Number: 62905
S13-2181-Rev. A, 14-Oct-13
www.vishay.com
9
Vishay Siliconix
SiZ914DT
This document is subject to change without notice.
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CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Reverse Current (Schottky)
0.1
1
10
100
0 0.18 0.36 0.54 0.72 0.9
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
- 50 - 25 0 25 50 75 100 125 150
I
R
- Reverse (A)
T
J
- Temperature (°C)
V
DS
= 10 V, 20 V
V
DS
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.000
0.001
0.002
0.003
0.004
0.005
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
°
J
°
0
20
40
60
80
100
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
I
DM
limited
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
10 s, 1 s
DC
I
D
limited
