AX5051
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4
Pinout Drawing
Figure 2. Pinout Drawing (Top View)
222325 24262728
141311 121098
7
1
2
3
4
5
6
15
21
20
19
18
17
16
GND
ANTN
VDD
NC
VDD_IO
MOSI
CLK
CLK16N
NC
NC
VREG
GND
AX5051
MISO
TST3
IRQ
ANTP
GND
VDD
NC
CLK16P
NC
NC
TST1
TST2
GND
RESET_N
SYSCLK
SEL
AX5051
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5
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Symbol Description Condition Min Max Units
VDD_IO Supply voltage 0.5 5.5 V
IDD Supply current 100 mA
P
tot
Total power consumption 800 mW
P
I
Absolute maximum input power at receiver input 15 dBm
I
I1
DC current into any pin except ANTP, ANTN 10 10 mA
I
I2
DC current into pins ANTP, ANTN 100 100 mA
I
O
Output current 40 mA
V
ia
Input voltage ANTP, ANTN pins 0.5 5.5 V
Input voltage digital pins 0.5 5.5 V
V
es
Electrostatic handling HBM 2000 2000 V
T
amb
Operating temperature 40 85 °C
T
stg
Storage temperature 65 150 °C
T
j
Junction temperature 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
AX5051
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6
DC Characteristics
Table 3. SUPPLIES
Symbol Description Condition Min Typ Max Units
T
AMB
Operational ambient temperature 40 27 85 °C
VDD_IO I/O and voltage regulator supply voltage
RX operation or TX operation
up to 4 dBm output power
2.2 3.0 3.6 V
TX operation up to 16 dBm
output power
2.4 3.0 3.6 V
VREG Internally regulated supply voltage
Powerdown mode
PWRMODE=0x00
1.7 V
All other power modes 2.1 2.5 2.8 V
VREG
droptyp
Regulator voltage drop RX operation or TX operation
up to 4 dBm output power
50 mV
VREG
dropmax
Regulator voltage drop at maximum internal
current consumption
TX mode with 16 dBm output
power
300 mV
I
PDOWN
Powerdown current PWRMODE = 0x00 0.5
mA
I
RXHS
Current consumption RX
High sensitivity mode:
VCO_I = 001; REF_I = 011
Bit rate 10 kbit/s 19 mA
I
RXLP
Current consumption RX
Low power mode:
VCO_I = 001; REF_I = 101
Bit rate 10 kbit/s 17 mA
I
TX
Current consumption TX
VCO_I = 001; REF_I = 011; LOCURST = 1,
(Note 1)
868 MHz, 15 dBm 45
mA
433 MHz, 15 dBm 45
TX
varvdd
Variation of output power over voltage VDD > 2.5 V ± 0.5 dB
TX
vartemp
Variation of output power over temperature VDD > 2.5 V ± 0.5 dB
1. The PA voltage is regulated to 2.5 V. Between 2.2 V and 2.55 V VDD_IO a drop of 1 dBm of output power is visible.
Note on Current Consumption in TX Mode
To achieve best output power the matching network has to
be optimized for the desired output power and frequency. As
a rule of thumb a good matching network produces about
50% efficiency with the AX5051 power amplifier although
over 90% are theoretically possible. A typical matching
network has between 1 dB and 2 dB loss (P
loss
).
The current consumption can be calculated as
I
TX
[mA] +
1
PA
efficiency
10
ǒ
P
out
[dBm])P
loss
[dB]
10
Ǔ
B 2.5V ) I
offse
t
I
offset
is about 12 mA for the VCO at 400470 MHz and
11 mA for 800940 MHz. The following table shows
calculated current consumptions versus output power for
P
loss
= 1 dB, PA
efficiency
= 0.5 and I
offset
= 11 mA at 868 MHz.
Table 4.
Pout [dBm] I [mA]
0 13.0
1 13.2
2 13.6
3 14.0
4 14.5
5 15.1
6 16.0
7 17.0
8 18.3
9 20.0
10 22.0
11 24.6
12 27.96
13 32.1
14 37.3
15 43.8
The AX5051 power amplifier runs from the regulated
VDD supply and not directly from the battery. This has the
advantage that the current and output power do not vary
much over supply voltage and temperature from 2.55 V to
3.6 V supply voltage. Between 2.55 V and 2.2 V a drop of
about 1 dB in output power occurs.

AX5051-1-TW30

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
RF Transceiver RADIO TRANSCEIVER
Lifecycle:
New from this manufacturer.
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