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APTC90DAM60CT1G

P1-P3P4-P6P7-P7
APTC90DAM60CT1G
APTC90DAM60CT1G – Rev 2 October, 2012
www.microsemi.com
1
–
7
11
CR1
Q2
10
9
12
NTC
12
3
4
65
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Breakdown Voltage 900 V
T
c
= 25°C 59
I
D
Continuous Drain Current
T
c
= 80°C 44
I
DM
Pulsed Drain current 150
A
V
GS
Gate - Source Voltage ±20 V
R
DSon
Drain - Source ON Resistance 60
m
P
D
Maximum Power Dissipation T
c
= 25°C 462 W
I
AR
Avalanche current (repetitive and non repetitive) 8.8 A
E
AR
Repetitive Avalanche Energy 2.9
E
AS
Single Pulse Avalanche Energy 1940
mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
- Ultra low R
DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
CR1 SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Boost chopper
Super Junction MOSFET
Power Module
V
DSS
= 900V
R
DSon
= 60m max @ Tj = 25°C
I
D
= 59A @ Tc = 25°C
APTC90DAM60CT1G
APTC90DAM60CT1G – Rev 2 October, 2012
www.microsemi.com
2
–
7
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
GS
= 0V,V
DS
= 900V
T
j
= 25°C 200
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 900V
T
j
= 125°C 1000
µA
R
DS(on)
Drain – Source on Resistance
V
GS
= 10V, I
D
= 52A 50 60
m
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 6mA 2.5 3 3.5 V
I
GSS
Gate – Source Leakage Current V
GS
= ±20 V, V
DS
= 0V 200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
iss
Input Capacitance 13.6
C
oss
Output Capacitance
V
GS
= 0V ; V
DS
= 100V
f = 1MHz
0.66
nF
Q
g
Total gate Charge 540
Q
gs
Gate – Source Charge 64
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 400V
I
D
= 52A
230
nC
T
d(on)
Turn-on Delay Time 70
T
r
Rise Time 20
T
d(off)
Turn-off Delay Time 400
T
f
Fall Time
Inductive Switching (125°C)
V
GS
= 10V
V
Bus
= 600V
I
D
= 52A
R
G
= 3.8
25
ns
E
on
Turn-on Switching Energy 1.8
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 10V ; V
Bus
= 600V
I
D
= 52A ; R
G
= 3.8
1.5
mJ
E
on
Turn-on Switching Energy 2.52
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 10V ; V
Bus
= 600V
I
D
= 52A ; R
G
= 3.8
1.7
mJ
CR1 SiC diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200 V
T
j
= 25°C 96 600
I
RM
Maximum Reverse Leakage Current V
R
=1200V
T
j
= 175°C 168 3000
µA
I
F
DC Forward Current Tc = 100°C 30 A
T
j
= 25°C 1.6 1.8
V
F
Diode Forward Voltage I
F
= 30A
T
j
= 175°C 2.3 3
V
Q
C
Total Capacitive Charge
I
F
= 30A, V
R
= 600V
di/dt =1000A/µs
120 nC
f = 1MHz, V
R
= 200V 288
C Total Capacitance
f = 1MHz, V
R
= 400V 207
pF
APTC90DAM60CT1G
APTC90DAM60CT1G – Rev 2 October, 2012
www.microsemi.com
3
–
7
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
CoolMOS
0.27
R
thJC
Junction to Case Thermal Resistance
SiC Diode
0.63
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000 V
T
J
Operating junction temperature range -40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 80 g
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 50
k
∆R
25
/R
25
5
%
B
25/85
T
25
= 298.15 K 3952
K
∆B/B T
C
=100°C 4
%
TT
B
R
R
T
11
exp
25
85/25
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
P1-P3P4-P6P7-P7

APTC90DAM60CT1G

Mfr. #:
Buy APTC90DAM60CT1G
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power Module - SiC
Lifecycle:
New from this manufacturer.
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