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IXFH15N80

P1-P3P4-P4
© 2002 IXYS All rights reserved
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 800 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 800 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 14N80 14 A
15N80 15 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
14N80 56 A
15N80 60 A
I
AR
T
C
= 25°C 14N80 14 A
15N80 15 A
E
AR
T
C
= 25°C30mJ
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 5 V/ns
T
J
≤ 150°C, R
G
= 2 Ω
P
D
T
C
= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight 6g
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
TO-247 AD
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
DS96523D(12/02)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA 800 V
V
DSS
temperature coefficient 0.096 %/K
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA 2.5 4.5 V
V
GS(th)
temperature coefficient -0.214 %/K
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C25µA
V
GS
= 0 V T
J
= 125°C1mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
14N80 0.70 Ω
15N80 0.60 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
DSS
I
D25
R
DS(on)
800 V 14 A 0.70
ΩΩ
ΩΩ
Ω
800 V 15 A 0.60
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 250 ns
IXFH14N80
IXFH15N80
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXFH 14N80
IXFH 15N80
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 8 14 S
C
iss
3965 4870 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 315 395 pF
C
rss
73 120 pF
t
d(on)
20 50 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
33 50 ns
t
d(off)
R
G
= 2 Ω (External) 63 100 ns
t
f
32 50 ns
Q
g(on)
150 200 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
23 45 nC
Q
gd
64 68 nC
R
thJC
0.42 K/W
R
thCK
0.25 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 14N80 14 A
15N80 15 A
I
SM
Repetitive; 14N80 56 A
15N80 60 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
T
J
= 25°C 250 ns
T
J
= 125°C 400 ns
Q
RM
1 µC
I
RM
8.5 A
I
F
= I
S
-di/dt = 100 A/µs,
V
R
= 100 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
© 2002 IXYS All rights reserved
IXFH 14N80
IXFH 15N80
V
GS
- Volts
234567
I
D
- Amperes
0
2
4
6
8
10
12
14
16
T
C
- Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
4
8
12
16
20
T
J
- Degrees C
25 50 75 100 125 150
R
DS(ON)
- Normalized
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
I
D
= 7.5A
I
D
- Amperes
0 5 10 15 20 25
R
DS(ON)
- Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
DS
- Volts
0 4 8 12 16 20
I
D
- Amperes
0
4
8
12
16
20
V
DS
- Volts
0246810
I
D
- Amperes
0
4
8
12
16
20
4V
V
GS
= 10V
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
5V
5V
4V
T
J
= 25
o
C
I
D
= 15A
T
J
= 25
O
C
IXFH14N80
IXFH15N80
T
J
= 125
o
C
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 0.5 I
D25
value vs. T
J
P1-P3P4-P4

IXFH15N80

Mfr. #:
Buy IXFH15N80
Manufacturer:
Littelfuse
Description:
MOSFET 800V 15A
Lifecycle:
New from this manufacturer.
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