IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Pulse Width - Seconds
0.00001 0.0001 0.001 0.01 0.1 1
Z
thJC
- (K/W)
0.001
0.01
0.1
1
V
DS
- Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
50
100
250
500
1000
2500
5000
V
SD
- Volts
0.20.40.60.81.01.21.4
I
D
- Amperes
0
10
20
30
40
50
Gate Charge - nC
0 50 100 150 200 250
V
GS
- Volts
0
2
4
6
8
10
12
Crss
Coss
Ciss
T
J
= 25
O
C
V
DS
= 400V
I
D
= 14A
I
G
= 1mA
f = 1MHz
T
J
= 125
O
C
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
D=0.2
IXFH 14N80
IXFH 15N80
Figure 8. Capacitance CurvesFigure 7. Gate Charge
Figure 9. Source Current vs. Source to Drain Voltage
Figure 11. Transient Thermal Resistance
