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IDB15E60ATMA1

P1-P3P4-P6P7-P8
200903-04Rev.2.4
Page 1
IDB15E60
Fast Switching EmCon
Diode
Product Summary
V
RRM
600 V
I
F
15 A
V
F
1.5 V
T
j
max
175 °C
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
• Easy paralleling
Pin 1 PIN 2 PIN 3
NC C A
Marking
D15E60
Type
Package Ordering Code
IDB15E60 PG-TO263-3 -
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Repetitive peak reverse voltage V
RRM
600 V
Continous forward current
T
C
=25°C
T
C
=90°C
I
F
29.2
19.6
A
Surge non repetitive forward current
T
C
=25°C, t
p
=10 ms, sine halfwave
I
FSM
60
Maximum repetitive forward current
T
C
=25°C, t
p
limited by T
jmax
, D=0.5
I
FRM
45
Power dissipation
T
C
=25°C
T
C
=90°C
P
tot
83.3
47.2
W
Operating and storage temperature T
j
, T
st
g
-55...+175 °C
Soldering temperature
reflow soldering, MSL1
T
S
260 °C
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
600
V
Continuous forward current
T
C
= 25C
T
C
= 90C
I
F
29.2
19.6
A
Surge non repetitive forward current
T
C
= 25C, t
p
= 10 ms, sine halfwave
I
FSM
60
A
Maximum repetitive forward current
T
C
= 25C, t
p
limited by t
j,max
, D = 0.5
I
FRM
45
A
Power dissipation
T
C
= 25C
T
C
= 90C
P
tot
83.3
47.2
W
Operating junction temperature
T
j
-40…+175
°C
Storage temperature
T
stg
-55...+150
Soldering temperature
1.6mm (0.063 in.) from case for 10 s
T
S
260
* RoHS compliant
2013-12-05
Fast Switching Emitter Controlled Diode
600V Emitter Controlled technology
PG-TO263-3
2009-03-04Rev.2.4
Page 2
IDB15E60
Thermal Characteristics
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
thJC
- - 1.8 K/W
Thermal resistance, junction - ambient, leaded R
thJA
- - 62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
35
62
-
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
Static Characteristics
Reverse leakage current
V
R
=600V, T
j
=25°C
V
R
=600V, T
j
=150°C
I
R
-
-
-
-
50
1250
µA
Forward voltage drop
I
F
=15A, T
j
=25°C
I
F
=15A, T
j
=150°C
V
F
-
-
1.5
1.5
2
-
V
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2013-12-05
2009-03-04Rev.2.4
Page 3
IDB15E60
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Reverse recovery time
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=25°C
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=125°C
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=150°C
t
rr
-
-
-
87
124
131
-
-
-
ns
Peak reverse current
V
R
=400V, I
F
= 15A, di
F
/dt=1000A/µs, T
j
=25°C
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=125°C
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=150°C
I
rrm
-
-
-
13.7
16.4
19.3
-
-
-
A
Reverse recovery charge
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=25°C
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=125°C
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=150°C
Q
rr
-
-
-
595
995
1104
-
-
-
nC
Reverse recovery softness factor
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=25°C
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=125°C
V
R
=400V, I
F
=15A, di
F
/dt=1000A/µs, T
j
=150°C
S
-
-
-
3.6
4.3
4.5
-
-
-
2013-12-05
P1-P3P4-P6P7-P8

IDB15E60ATMA1

Mfr. #:
Buy IDB15E60ATMA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode
Lifecycle:
New from this manufacturer.
Delivery:
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