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IDB15E60ATMA1

P1-P3P4-P6P7-P8
2009-03-04Rev.2.4
Page 4
IDB15E60
2 Diode forward current
I
F
= f(T
C
)
parameter: T
j
≤ 175°C
25 50 75 100 125
°C
175
T
C
0
5
10
15
20
A
30
I
F
1 Power dissipation
P
tot
= f (T
C
)
parameter: T
j
≤ 175 °C
25 50 75 100 125
°C
175
T
C
0
10
20
30
40
50
60
70
W
90
P
tot
3 Typ. diode forward current
I
F
= f (V
F
)
0.5 1 1.5
V
2.5
V
F
0
10
20
30
A
50
I
F
-55°C
25°C
100°C
150°C
4 Typ. diode forward voltage
V
F
= f (T
j
)
-60 -20 20 60 100
°C
160
T
j
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
V
2
V
F
7.5A
15A
30A
2013-12-05
2009-03-04Rev.2.4
Page 5
IDB15E60
5 Typ. reverse recovery time
t
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125°C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
0
50
100
150
200
250
300
350
400
ns
500
t
rr
30A
15A
7.5A
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125 °C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
550
650
750
850
950
1050
1150
1250
nC
1450
Q
rr
7.5A
15A
30A
7 Typ. reverse recovery current
I
rr
= f (di
F
/dt)
parameter: V
R
= 400V, T
j
= 125°C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
4
5
6
7
8
9
10
11
12
13
14
15
16
A
18
I
rr
30A
15A
7.5A
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter: V
R
= 400V, T
j
= 125°C
200 300 400 500 600 700 800
A/µs
1000
di
F
/dt
3
4
5
6
7
8
9
11
S
7,5A
15A
30A
2013-12-05
2009-03-04Rev.2.4
Page 6
IDB15E60
9 Max. transient thermal impedance
Z
thJC
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
IDP15E60
Z
thJC
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2013-12-05
P1-P3P4-P6P7-P8

IDB15E60ATMA1

Mfr. #:
Buy IDB15E60ATMA1
Manufacturer:
Infineon Technologies
Description:
Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode
Lifecycle:
New from this manufacturer.
Delivery:
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