VUM24-05N Datasheet VUM24-05N | P1-P3

1 - 4

VUM 24-05N

20070605c

IXYS reserves the right to change limits, test conditions and dimensions

I

D25

=35A

V

DSS

= 500 V

R

DS(on)

= 0.12

ΩΩ

Ω

Module for Power Factor Correction

Features

• Package with DCB ceramic base plate

• Soldering connections for PCB

mounting

• Isolation voltage 3600 V~

• Low R

DS(on)

HDMOS

TM

process

• Low package inductance for high

speed switching

• Ultrafast boost diode

• Kelvin source for easy drive

Applications

• Power factor pre-conditioner for

SMPS, UPS, battery chargers and

inverters

• Boost topology for SMPS including

1~ rectifier bridge

• Power supply for welding equipment

Advantages

• 3 functions in one package

• Output power up to 5 kW

• No external isolation

• Easy to mount with two screws

• Suitable for wave soldering

• High temperature and power cycling

capability

• Fits easiliy to all available PFC

controller ICs

V

RRM (Diode)

V

DSS

Type

VV

600 500 VUM 24-05N

Power MOSFET Stage

for Boost Converters

513278 46

Symbol Conditions Maximum Ratings

V

DSS

T

VJ

= 25°C to 150°C 500 V

V

DGR

T

VJ

= 25°C to 150°C; R

GS

= 10 kΩ 500 V

V

GS

Continuous ±20 V

I

D

T

S

= 85°C 24 A

I

D

T

S

= 25°C 35 A

I

DM

T

S

= 25°C, t

p

= ① 95 A

P

D

T

S

= 85°C 170 W

I

S

V

GS

= 0 V, T

S

= 25°C 24 A

I

SM

V

GS

= 0 V, T

S

= 25°C, t

p

= ① 95 A

V

RRM

600 V

I

dAV

T

S

= 85°C, rectangular δ = 0.5 40 A

I

FSM

T

VJ

= 45°C, t = 10 ms (50 Hz) 300 A

t = 8.3 ms (60 Hz) 320 A

T

VJ

= 150°C, t = 10 ms (50 Hz) 260 A

t = 8.3 ms (60 Hz) 280 A

P T

S

= 85°C 36 W

V

RRM

800 V

I

dAV

T

S

= 85°C, sinus 180° 40 A

I

FSM

T

VJ

= 45°C, t = 10 ms (50 Hz) 300 A

t = 8.3 ms (60 Hz) 320 A

T

VJ

= 150°C, t = 10 ms (50 Hz) 260 A

t = 8.3 ms (60 Hz) 280 A

P T

S

= 85°C 33 W

T

VJ

-40...+150 °C

T

JM

150 °C

T

stg

-40...+150 °C

V

ISOL

50/60 Hz t = 1 min 3000 V~

I

ISOL

≤ 1 mA t = 1 s 3600 V~

M

d

Mounting torque (M5) 2-2.5/18-22 Nm/lb.in.

Weight 28 g

MOSFET

Boost Diode

Module Rectifier Diodes

① Pulse width limited by T

VJ

5

7

6

8

3

2

4

1

2 - 4

VUM 24-05N

20070605c

IXYS reserves the right to change limits, test conditions and dimensions

Symbol Conditions Characteristic Values

(T

VJ

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 2 mA 500 V

V

GS(th)

V

DS

= 20 V, I

D

= 20 mA 2 5 V

I

GSS

V

GS

= ±20 V, V

DS

= 0 V ±500 nA

I

DSS

V

DS

= 500 V, V

GS

= 0 V 2 mA

R

DS(on)

T

VJ

= 25°C 0.12 Ω

R

Gint

T

VJ

= 25°C 1.5 Ω

g

fs

V

DS

= 15 V, I

DS

= 12 A 30 S

V

DS

I

DS

= 24 A, V

GS

= 0 V 1.5 V

t

d(on)

100 ns

t

d(off)

220 ns

C

iss

8.5 nF

C

oss

0.9 nF

C

rss

0.3 nF

Q

g

V

DS

= 250 V, I

D

= 12 A, V

GS

= 10 V 350 nC

R

thJH

with heat transfer paste 0.38 K/W

V

F

I

F

= 22 A; T

VJ

= 25°C 1.65 V

T

VJ

=150°C 1.4 V

I

R

V

R

= 600 V, T

VJ

= 25°C 1.5 mA

V

R

= 480 V, T

VJ

= 25°C 0.25 mA

T

VJ

=125°C 7 mA

V

T0

For power-loss calculations only 1.14 V

r

T

VJ

= 125°C 10 mΩ

I

RM

I

F

= 30 A; -di

F

/dt = 240 A/μs

V

R

= 350 V, T

VJ

= 100°C 10 11 A

R

thJH

with heat transfer paste 1.8 K/W

V

F

I

F

= 20 A, T

VJ

= 25°C 1.4 V

T

VJ

=125°C 1.4 V

I

R

V

R

= 800 V T

VJ

= 25°C 0.25 mA

V

R

= 640 V, T

VJ

=125°C 2 mA

V

T0

For power-loss calculations only 1.05 V

r

T

VJ

= 125°C 16 mΩ

R

thJH

with heat transfer paste 2 K/W

V

DS

= 250 V, I

DS

= 12 A, V

GS

= 10 V

Zgen. = 1 Ω, L-load

V

DS

= 25 V, f = 1 MHz, V

GS

= 0 V

Rectifier Diodes

Boost Diode

MOSFET

Fig. 1 Non-repetitive peak surge

current (Rectifier Diodes)

Fig. 2 I

2

t for fusing (Rectifier Diodes)

Dimensions in mm (1 mm = 0.0394")

t

I

2

t

A

2

s

A

I

FSM

0.001 0.01 0.1 1

0

50

100

150

200

250

300

350

110

0

100

200

300

400

500

s

ms

t

V

R

= 0.8V

RRM

T

VJ

= 45°C

T

VJ

= 125°C

T

VJ

= 45°C

T

VJ

= 125°C

3 - 4

VUM 24-05N

20070605c

IXYS reserves the right to change limits, test conditions and dimensions

234567

0

10

20

30

40

50

60

70

80

-50 0 50 100 150

0.0

0.5

1.0

1.5

2.0

2.5

s

g

fs

0 20406080100

0

20

40

60

80

0.51.01.52.02.5

0

20

40

60

80

100

120

10 100 1000

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 5 10 15 20

0.1

1

10

100

0 100 200 300 400

0

2

4

6

8

10

12

-50 0 50 100 150

0.4

0.6

0.8

1.0

1.2

1.4

A/μs

V

DS

V

C

nF

nC

°C

BV

DSS

T

VJ

norm.

°C

V

GS

Q

g

V

norm.

V

GS(th)

T

VJ

R

DS(on)

0246810

0

10

20

30

40

50

60

70

80

I

D

V

DS

V

A

V

GS

I

D

V

A

V

F

A

T

VJ

= 25°C

T

VJ

= 125°C

-di

F

/dt

V

μC

V

GS

= 5 V

6 V

10 V

7 V

I

D

=18A

V

DSS

V

GS(th)

V

DS

= 250 V

I

D

= 18 A

I

G

= 10 mA

C

iss

C

oss

C

rss

Q

rr

T

VJ

=150°C

T

VJ

=100°C

T

VJ

= 25°C

I

F

= 37 A

I

F

= 74 A

I

F

= 37 A

I

F

= 18.5 A

I

F

A

I

D

typ.

max.

T

VJ

=100°C

V

R

= 350 V

Fig. 3 Typ. output characteristic Fig. 4 Typ. transfer characteristics Fig. 5 Typ. normalized

I

D

= f (V

DS

) (MOSFET) I

D

= f (V

GS

) (MOSFET) R

DS(on)

= f (T

VJ

) (MOSFET)

Fig. 6 Typ. normalized BV

DSS

= f (T

VJ

) Fig. 7 Typ. turn-on gate charge Fig. 8 Typ. capacitances C = f (V

DS

),

V

GS(th)

= f (T

VJ

) (MOSFET) characteristics, V

GS

= f (Q

g

) (MOSFET) f = 1 MHz (MOSFET)

Fig. 9 Typ. transconductance, Fig. 10 Forward current versus Fig. 11 Recovery charge versus -di

F

/dt

g

fs

= f (I

D

) (MOSFET) voltage drop (Boost Diode) (Boost Diode)

VUM24-05N

VUM24-05N

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